IRF7495TRPBF
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Infineon Technologies IRF7495TRPBF

Manufacturer No:
IRF7495TRPBF
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Datasheet:
IRF7495TRPBF Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 100V 7.3A 8SO
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:7.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:22mOhm @ 4.4A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:51 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1530 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):2.5W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-SO
Package / Case:8-SOIC (0.154", 3.90mm Width)
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Part Number IRF7495TRPBF IRF7455TRPBF   IRF7465TRPBF   IRF7475TRPBF   IRF7490TRPBF   IRF7492TRPBF   IRF7493TRPBF   IRF7494TRPBF  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Active Last Time Buy Active Obsolete Active Obsolete Active Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 30 V 150 V 12 V 100 V 200 V 80 V 150 V
Current - Continuous Drain (Id) @ 25°C 7.3A (Ta) 15A (Ta) 1.9A (Ta) 11A (Ta) 5.4A (Ta) 3.7A (Ta) 9.3A (Tc) 5.1A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V 2.8V, 10V 10V 2.8V, 4.5V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 22mOhm @ 4.4A, 10V 7.5mOhm @ 15A, 10V 280mOhm @ 1.14A, 10V 15mOhm @ 8.8A, 4.5V 39mOhm @ 3.2A, 10V 79mOhm @ 2.2A, 10V 15mOhm @ 5.6A, 10V 44mOhm @ 3.1A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 2V @ 250µA 5.5V @ 250µA 2V @ 250µA 4V @ 250µA 2.5V @ 250µA 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 51 nC @ 10 V 56 nC @ 5 V 15 nC @ 10 V 19 nC @ 4.5 V 56 nC @ 10 V 59 nC @ 10 V 53 nC @ 10 V 53 nC @ 10 V
Vgs (Max) ±20V ±12V ±30V ±12V ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 1530 pF @ 25 V 3480 pF @ 25 V 330 pF @ 25 V 1590 pF @ 6 V 1720 pF @ 25 V 1820 pF @ 25 V 1510 pF @ 25 V 1783 pF @ 25 V
FET Feature - - - - - - - -
Power Dissipation (Max) 2.5W (Ta) 2.5W (Ta) 2.5W (Ta) 2.5W (Ta) 2.5W (Ta) 2.5W (Ta) 2.5W (Tc) 2.5W (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package 8-SO 8-SO 8-SO 8-SO 8-SO 8-SO 8-SO 8-SO
Package / Case 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width)

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