IRF7494PBF
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Infineon Technologies IRF7494PBF

Manufacturer No:
IRF7494PBF
Manufacturer:
Infineon Technologies
Package:
Tube
Datasheet:
IRF7494PBF Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 150V 5.1A 8SO
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):150 V
Current - Continuous Drain (Id) @ 25°C:5.1A (Ta)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:44mOhm @ 3.1A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:53 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1783 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):2.5W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-SO
Package / Case:8-SOIC (0.154", 3.90mm Width)
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Similar Products

Part Number IRF7494PBF IRF7495PBF   IRF7464PBF   IRF7484PBF   IRF7490PBF   IRF7492PBF   IRF7493PBF  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Obsolete Discontinued at Digi-Key Obsolete Obsolete Discontinued at Digi-Key Obsolete Discontinued at Digi-Key
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 150 V 100 V 200 V 40 V 100 V 200 V 80 V
Current - Continuous Drain (Id) @ 25°C 5.1A (Ta) 7.3A (Ta) 1.2A (Ta) 14A (Ta) 5.4A (Ta) 3.7A (Ta) 9.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 7V 10V 10V 10V
Rds On (Max) @ Id, Vgs 44mOhm @ 3.1A, 10V 22mOhm @ 4.4A, 10V 730mOhm @ 720mA, 10V 10mOhm @ 14A, 7V 39mOhm @ 3.2A, 10V 79mOhm @ 2.2A, 10V 15mOhm @ 5.6A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA 5.5V @ 250µA 2V @ 250µA 4V @ 250µA 2.5V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 53 nC @ 10 V 51 nC @ 10 V 14 nC @ 10 V 100 nC @ 7 V 56 nC @ 10 V 59 nC @ 10 V 53 nC @ 10 V
Vgs (Max) ±20V ±20V ±30V ±8V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 1783 pF @ 25 V 1530 pF @ 25 V 280 pF @ 25 V 3520 pF @ 25 V 1720 pF @ 25 V 1820 pF @ 25 V 1510 pF @ 25 V
FET Feature - - - - - - -
Power Dissipation (Max) 2.5W (Ta) 2.5W (Ta) 2.5W (Ta) 2.5W (Ta) 2.5W (Ta) 2.5W (Ta) 2.5W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package 8-SO 8-SO 8-SO 8-SO 8-SO 8-SO 8-SO
Package / Case 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width)

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