IRF7478PBF
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Infineon Technologies IRF7478PBF

Manufacturer No:
IRF7478PBF
Manufacturer:
Infineon Technologies
Package:
Tube
Datasheet:
IRF7478PBF Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 60V 7A 8SO
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:7A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:26mOhm @ 4.2A, 10V
Vgs(th) (Max) @ Id:3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:31 nC @ 4.5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1740 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):2.5W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-SO
Package / Case:8-SOIC (0.154", 3.90mm Width)
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Part Number IRF7478PBF IRF7488PBF   IRF7458PBF   IRF7468PBF   IRF7470PBF   IRF7471PBF   IRF7473PBF   IRF7475PBF   IRF7477PBF  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Discontinued at Digi-Key Discontinued at Digi-Key Discontinued at Digi-Key Discontinued at Digi-Key Discontinued at Digi-Key Obsolete Discontinued at Digi-Key Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 80 V 30 V 40 V 40 V 40 V 100 V 12 V 30 V
Current - Continuous Drain (Id) @ 25°C 7A (Ta) 6.3A (Ta) 14A (Ta) 9.4A (Ta) 10A (Ta) 10A (Ta) 6.9A (Ta) 11A (Ta) 14A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 10V 10V, 16V 4.5V, 10V 2.8V, 10V 4.5V, 10V 10V 2.8V, 4.5V 4.5V, 10V
Rds On (Max) @ Id, Vgs 26mOhm @ 4.2A, 10V 29mOhm @ 3.8A, 10V 8mOhm @ 14A, 16V 15.5mOhm @ 9.4A, 10V 13mOhm @ 10A, 10V 13mOhm @ 10A, 10V 26mOhm @ 4.1A, 10V 15mOhm @ 8.8A, 4.5V 8.5mOhm @ 14A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA 4V @ 250µA 4V @ 250µA 2V @ 250µA 2V @ 250µA 3V @ 250µA 5.5V @ 250µA 2V @ 250µA 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 31 nC @ 4.5 V 57 nC @ 10 V 59 nC @ 10 V 34 nC @ 4.5 V 44 nC @ 4.5 V 32 nC @ 4.5 V 61 nC @ 10 V 19 nC @ 4.5 V 38 nC @ 4.5 V
Vgs (Max) ±20V ±20V ±30V ±12V ±12V ±20V ±20V ±12V ±20V
Input Capacitance (Ciss) (Max) @ Vds 1740 pF @ 25 V 1680 pF @ 25 V 2410 pF @ 15 V 2460 pF @ 20 V 3430 pF @ 20 V 2820 pF @ 20 V 3180 pF @ 25 V 1590 pF @ 6 V 2710 pF @ 15 V
FET Feature - - - - - - - - -
Power Dissipation (Max) 2.5W (Ta) 2.5W (Ta) 2.5W (Ta) 2.5W (Ta) 2.5W (Ta) 2.5W (Ta) 2.5W (Ta) 2.5W (Ta) 2.5W (Ta)
Operating Temperature -55°C ~ 150°C (TJ) - -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package 8-SO 8-SO 8-SO 8-SO 8-SO 8-SO 8-SO 8-SO 8-SO
Package / Case 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width)

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