IRF7476TRPBF
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Infineon Technologies IRF7476TRPBF

Manufacturer No:
IRF7476TRPBF
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Datasheet:
IRF7476TRPBF Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 12V 15A 8SO
Delivery:
Payment:
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iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):12 V
Current - Continuous Drain (Id) @ 25°C:15A (Ta)
Drive Voltage (Max Rds On, Min Rds On):2.8V, 4.5V
Rds On (Max) @ Id, Vgs:8mOhm @ 15A, 4.5V
Vgs(th) (Max) @ Id:1.9V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:40 nC @ 4.5 V
Vgs (Max):±12V
Input Capacitance (Ciss) (Max) @ Vds:2550 pF @ 6 V
FET Feature:- 
Power Dissipation (Max):2.5W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-SO
Package / Case:8-SOIC (0.154", 3.90mm Width)
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Part Number IRF7476TRPBF IRF7478TRPBF   IRF7477TRPBF   IRF7456TRPBF   IRF7466TRPBF   IRF7470TRPBF   IRF7471TRPBF   IRF7473TRPBF   IRF7475TRPBF  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Obsolete Obsolete Obsolete Last Time Buy Obsolete Active Obsolete Active Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 12 V 60 V 30 V 20 V 30 V 40 V 40 V 100 V 12 V
Current - Continuous Drain (Id) @ 25°C 15A (Ta) 7A (Ta) 14A (Ta) 16A (Ta) 11A (Ta) 10A (Ta) 10A (Ta) 6.9A (Ta) 11A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.8V, 4.5V 4.5V, 10V 4.5V, 10V 2.8V, 10V 4.5V, 10V 2.8V, 10V 4.5V, 10V 10V 2.8V, 4.5V
Rds On (Max) @ Id, Vgs 8mOhm @ 15A, 4.5V 26mOhm @ 4.2A, 10V 8.5mOhm @ 14A, 10V 6.5mOhm @ 16A, 10V 12.5mOhm @ 11A, 10V 13mOhm @ 10A, 10V 13mOhm @ 10A, 10V 26mOhm @ 4.1A, 10V 15mOhm @ 8.8A, 4.5V
Vgs(th) (Max) @ Id 1.9V @ 250µA 3V @ 250µA 2.5V @ 250µA 2V @ 250µA 3V @ 250µA 2V @ 250µA 3V @ 250µA 5.5V @ 250µA 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 40 nC @ 4.5 V 31 nC @ 4.5 V 38 nC @ 4.5 V 62 nC @ 5 V 23 nC @ 4.5 V 44 nC @ 4.5 V 32 nC @ 4.5 V 61 nC @ 10 V 19 nC @ 4.5 V
Vgs (Max) ±12V ±20V ±20V ±12V ±20V ±12V ±20V ±20V ±12V
Input Capacitance (Ciss) (Max) @ Vds 2550 pF @ 6 V 1740 pF @ 25 V 2710 pF @ 15 V 3640 pF @ 15 V 2100 pF @ 15 V 3430 pF @ 20 V 2820 pF @ 20 V 3180 pF @ 25 V 1590 pF @ 6 V
FET Feature - - - - - - - - -
Power Dissipation (Max) 2.5W (Ta) 2.5W (Ta) 2.5W (Ta) 2.5W (Ta) 2.5W (Ta) 2.5W (Ta) 2.5W (Ta) 2.5W (Ta) 2.5W (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package 8-SO 8-SO 8-SO 8-SO 8-SO 8-SO 8-SO 8-SO 8-SO
Package / Case 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width)

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