IRF7475PBF
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Infineon Technologies IRF7475PBF

Manufacturer No:
IRF7475PBF
Manufacturer:
Infineon Technologies
Package:
Tube
Datasheet:
IRF7475PBF Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 12V 11A 8SO
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):12 V
Current - Continuous Drain (Id) @ 25°C:11A (Ta)
Drive Voltage (Max Rds On, Min Rds On):2.8V, 4.5V
Rds On (Max) @ Id, Vgs:15mOhm @ 8.8A, 4.5V
Vgs(th) (Max) @ Id:2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:19 nC @ 4.5 V
Vgs (Max):±12V
Input Capacitance (Ciss) (Max) @ Vds:1590 pF @ 6 V
FET Feature:- 
Power Dissipation (Max):2.5W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-SO
Package / Case:8-SOIC (0.154", 3.90mm Width)
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Part Number IRF7475PBF IRF7495PBF   IRF7477PBF   IRF7478PBF   IRF7425PBF   IRF7455PBF   IRF7465PBF   IRF7470PBF   IRF7471PBF   IRF7473PBF  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Obsolete Discontinued at Digi-Key Obsolete Discontinued at Digi-Key Discontinued at Digi-Key Discontinued at Digi-Key Discontinued at Digi-Key Discontinued at Digi-Key Obsolete Discontinued at Digi-Key
FET Type N-Channel N-Channel N-Channel N-Channel P-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 12 V 100 V 30 V 60 V 20 V 30 V 150 V 40 V 40 V 100 V
Current - Continuous Drain (Id) @ 25°C 11A (Ta) 7.3A (Ta) 14A (Ta) 7A (Ta) 15A (Ta) 15A (Ta) 1.9A (Ta) 10A (Ta) 10A (Ta) 6.9A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.8V, 4.5V 10V 4.5V, 10V 4.5V, 10V 2.5V, 4.5V 2.8V, 10V 10V 2.8V, 10V 4.5V, 10V 10V
Rds On (Max) @ Id, Vgs 15mOhm @ 8.8A, 4.5V 22mOhm @ 4.4A, 10V 8.5mOhm @ 14A, 10V 26mOhm @ 4.2A, 10V 8.2mOhm @ 15A, 4.5V 7.5mOhm @ 15A, 10V 280mOhm @ 1.14A, 10V 13mOhm @ 10A, 10V 13mOhm @ 10A, 10V 26mOhm @ 4.1A, 10V
Vgs(th) (Max) @ Id 2V @ 250µA 4V @ 250µA 2.5V @ 250µA 3V @ 250µA 1.2V @ 250µA 2V @ 250µA 5.5V @ 250µA 2V @ 250µA 3V @ 250µA 5.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 19 nC @ 4.5 V 51 nC @ 10 V 38 nC @ 4.5 V 31 nC @ 4.5 V 130 nC @ 4.5 V 56 nC @ 5 V 15 nC @ 10 V 44 nC @ 4.5 V 32 nC @ 4.5 V 61 nC @ 10 V
Vgs (Max) ±12V ±20V ±20V ±20V ±12V ±12V ±30V ±12V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 1590 pF @ 6 V 1530 pF @ 25 V 2710 pF @ 15 V 1740 pF @ 25 V 7980 pF @ 15 V 3480 pF @ 25 V 330 pF @ 25 V 3430 pF @ 20 V 2820 pF @ 20 V 3180 pF @ 25 V
FET Feature - - - - - - - - - -
Power Dissipation (Max) 2.5W (Ta) 2.5W (Ta) 2.5W (Ta) 2.5W (Ta) 2.5W (Ta) 2.5W (Ta) 2.5W (Ta) 2.5W (Ta) 2.5W (Ta) 2.5W (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package 8-SO 8-SO 8-SO 8-SO 8-SO 8-SO 8-SO 8-SO 8-SO 8-SO
Package / Case 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width)

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