IRF7473PBF
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Infineon Technologies IRF7473PBF

Manufacturer No:
IRF7473PBF
Manufacturer:
Infineon Technologies
Package:
Tube
Datasheet:
IRF7473PBF Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 100V 6.9A 8SO
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:6.9A (Ta)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:26mOhm @ 4.1A, 10V
Vgs(th) (Max) @ Id:5.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:61 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:3180 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):2.5W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-SO
Package / Case:8-SOIC (0.154", 3.90mm Width)
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Part Number IRF7473PBF IRF7475PBF   IRF7477PBF   IRF7478PBF   IRF7493PBF   IRF7433PBF   IRF7453PBF   IRF7463PBF   IRF7470PBF   IRF7471PBF  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Discontinued at Digi-Key Obsolete Obsolete Discontinued at Digi-Key Discontinued at Digi-Key Obsolete Obsolete Discontinued at Digi-Key Discontinued at Digi-Key Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel P-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 12 V 30 V 60 V 80 V 12 V 250 V 30 V 40 V 40 V
Current - Continuous Drain (Id) @ 25°C 6.9A (Ta) 11A (Ta) 14A (Ta) 7A (Ta) 9.3A (Tc) 8.9A (Ta) 2.2A (Ta) 14A (Ta) 10A (Ta) 10A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V 2.8V, 4.5V 4.5V, 10V 4.5V, 10V 10V 1.8V, 4.5V 10V 2.7V, 10V 2.8V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 26mOhm @ 4.1A, 10V 15mOhm @ 8.8A, 4.5V 8.5mOhm @ 14A, 10V 26mOhm @ 4.2A, 10V 15mOhm @ 5.6A, 10V 24mOhm @ 8.7A, 4.5V 230mOhm @ 1.3A, 10V 8mOhm @ 14A, 10V 13mOhm @ 10A, 10V 13mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 5.5V @ 250µA 2V @ 250µA 2.5V @ 250µA 3V @ 250µA 4V @ 250µA 900mV @ 250µA 5.5V @ 250µA 2V @ 250µA 2V @ 250µA 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 61 nC @ 10 V 19 nC @ 4.5 V 38 nC @ 4.5 V 31 nC @ 4.5 V 53 nC @ 10 V 20 nC @ 4.5 V 38 nC @ 10 V 51 nC @ 4.5 V 44 nC @ 4.5 V 32 nC @ 4.5 V
Vgs (Max) ±20V ±12V ±20V ±20V ±20V ±8V ±30V ±12V ±12V ±20V
Input Capacitance (Ciss) (Max) @ Vds 3180 pF @ 25 V 1590 pF @ 6 V 2710 pF @ 15 V 1740 pF @ 25 V 1510 pF @ 25 V 1877 pF @ 10 V 930 pF @ 25 V 3150 pF @ 15 V 3430 pF @ 20 V 2820 pF @ 20 V
FET Feature - - - - - - - - - -
Power Dissipation (Max) 2.5W (Ta) 2.5W (Ta) 2.5W (Ta) 2.5W (Ta) 2.5W (Tc) 2.5W (Ta) 2.5W (Ta) 2.5W (Ta) 2.5W (Ta) 2.5W (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package 8-SO 8-SO 8-SO 8-SO 8-SO 8-SO 8-SO 8-SO 8-SO 8-SO
Package / Case 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width)

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