IRF7471PBF
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Infineon Technologies IRF7471PBF

Manufacturer No:
IRF7471PBF
Manufacturer:
Infineon Technologies
Package:
Tube
Datasheet:
IRF7471PBF Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 40V 10A 8SO
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):40 V
Current - Continuous Drain (Id) @ 25°C:10A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:13mOhm @ 10A, 10V
Vgs(th) (Max) @ Id:3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:32 nC @ 4.5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:2820 pF @ 20 V
FET Feature:- 
Power Dissipation (Max):2.5W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-SO
Package / Case:8-SOIC (0.154", 3.90mm Width)
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Similar Products

Part Number IRF7471PBF IRF7475PBF   IRF7473PBF   IRF7477PBF   IRF7478PBF   IRF7451PBF   IRF7470PBF  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Obsolete Obsolete Discontinued at Digi-Key Obsolete Discontinued at Digi-Key Obsolete Discontinued at Digi-Key
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V 12 V 100 V 30 V 60 V 150 V 40 V
Current - Continuous Drain (Id) @ 25°C 10A (Ta) 11A (Ta) 6.9A (Ta) 14A (Ta) 7A (Ta) 3.6A (Ta) 10A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 2.8V, 4.5V 10V 4.5V, 10V 4.5V, 10V 10V 2.8V, 10V
Rds On (Max) @ Id, Vgs 13mOhm @ 10A, 10V 15mOhm @ 8.8A, 4.5V 26mOhm @ 4.1A, 10V 8.5mOhm @ 14A, 10V 26mOhm @ 4.2A, 10V 90mOhm @ 2.2A, 10V 13mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA 2V @ 250µA 5.5V @ 250µA 2.5V @ 250µA 3V @ 250µA 5.5V @ 250µA 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 32 nC @ 4.5 V 19 nC @ 4.5 V 61 nC @ 10 V 38 nC @ 4.5 V 31 nC @ 4.5 V 41 nC @ 10 V 44 nC @ 4.5 V
Vgs (Max) ±20V ±12V ±20V ±20V ±20V ±30V ±12V
Input Capacitance (Ciss) (Max) @ Vds 2820 pF @ 20 V 1590 pF @ 6 V 3180 pF @ 25 V 2710 pF @ 15 V 1740 pF @ 25 V 990 pF @ 25 V 3430 pF @ 20 V
FET Feature - - - - - - -
Power Dissipation (Max) 2.5W (Ta) 2.5W (Ta) 2.5W (Ta) 2.5W (Ta) 2.5W (Ta) 2.5W (Ta) 2.5W (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) - -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package 8-SO 8-SO 8-SO 8-SO 8-SO 8-SO 8-SO
Package / Case 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width)

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