IRF7470PBF
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Infineon Technologies IRF7470PBF

Manufacturer No:
IRF7470PBF
Manufacturer:
Infineon Technologies
Package:
Tube
Datasheet:
IRF7470PBF Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 40V 10A 8SO
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):40 V
Current - Continuous Drain (Id) @ 25°C:10A (Ta)
Drive Voltage (Max Rds On, Min Rds On):2.8V, 10V
Rds On (Max) @ Id, Vgs:13mOhm @ 10A, 10V
Vgs(th) (Max) @ Id:2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:44 nC @ 4.5 V
Vgs (Max):±12V
Input Capacitance (Ciss) (Max) @ Vds:3430 pF @ 20 V
FET Feature:- 
Power Dissipation (Max):2.5W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-SO
Package / Case:8-SOIC (0.154", 3.90mm Width)
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Part Number IRF7470PBF IRF7475PBF   IRF7490PBF   IRF7471PBF   IRF7473PBF   IRF7477PBF   IRF7478PBF   IRF7420PBF   IRF7450PBF   IRF7460PBF  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Discontinued at Digi-Key Obsolete Discontinued at Digi-Key Obsolete Discontinued at Digi-Key Obsolete Discontinued at Digi-Key Discontinued at Digi-Key Discontinued at Digi-Key Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel P-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V 12 V 100 V 40 V 100 V 30 V 60 V 12 V 200 V 20 V
Current - Continuous Drain (Id) @ 25°C 10A (Ta) 11A (Ta) 5.4A (Ta) 10A (Ta) 6.9A (Ta) 14A (Ta) 7A (Ta) 11.5A (Tc) 2.5A (Ta) 12A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.8V, 10V 2.8V, 4.5V 10V 4.5V, 10V 10V 4.5V, 10V 4.5V, 10V 1.8V, 4.5V 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 13mOhm @ 10A, 10V 15mOhm @ 8.8A, 4.5V 39mOhm @ 3.2A, 10V 13mOhm @ 10A, 10V 26mOhm @ 4.1A, 10V 8.5mOhm @ 14A, 10V 26mOhm @ 4.2A, 10V 14mOhm @ 11.5A, 4.5V 170mOhm @ 1.5A, 10V 10mOhm @ 12A, 10V
Vgs(th) (Max) @ Id 2V @ 250µA 2V @ 250µA 4V @ 250µA 3V @ 250µA 5.5V @ 250µA 2.5V @ 250µA 3V @ 250µA 900mV @ 250µA 5.5V @ 250µA 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 44 nC @ 4.5 V 19 nC @ 4.5 V 56 nC @ 10 V 32 nC @ 4.5 V 61 nC @ 10 V 38 nC @ 4.5 V 31 nC @ 4.5 V 38 nC @ 4.5 V 39 nC @ 10 V 19 nC @ 4.5 V
Vgs (Max) ±12V ±12V ±20V ±20V ±20V ±20V ±20V ±8V ±30V ±20V
Input Capacitance (Ciss) (Max) @ Vds 3430 pF @ 20 V 1590 pF @ 6 V 1720 pF @ 25 V 2820 pF @ 20 V 3180 pF @ 25 V 2710 pF @ 15 V 1740 pF @ 25 V 3529 pF @ 10 V 940 pF @ 25 V 2050 pF @ 10 V
FET Feature - - - - - - - - - -
Power Dissipation (Max) 2.5W (Ta) 2.5W (Ta) 2.5W (Ta) 2.5W (Ta) 2.5W (Ta) 2.5W (Ta) 2.5W (Ta) 2.5W (Ta) 2.5W (Ta) 2.5W (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package 8-SO 8-SO 8-SO 8-SO 8-SO 8-SO 8-SO 8-SO 8-SO 8-SO
Package / Case 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width)

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