IRF7469
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Infineon Technologies IRF7469

Manufacturer No:
IRF7469
Manufacturer:
Infineon Technologies
Package:
Tube
Datasheet:
IRF7469 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 40V 9A 8SO
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):40 V
Current - Continuous Drain (Id) @ 25°C:9A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:17mOhm @ 9A, 10V
Vgs(th) (Max) @ Id:3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:23 nC @ 4.5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:2000 pF @ 20 V
FET Feature:- 
Power Dissipation (Max):2.5W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-SO
Package / Case:8-SOIC (0.154", 3.90mm Width)
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Similar Products

Part Number IRF7469 IRF7459   IRF7460   IRF7463   IRF7464   IRF7465   IRF7466   IRF7467   IRF7468  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V 20 V 20 V 30 V 200 V 150 V 30 V 30 V 40 V
Current - Continuous Drain (Id) @ 25°C 9A (Ta) 12A (Ta) 12A (Ta) 14A (Ta) 1.2A (Ta) 1.9A (Ta) 11A (Ta) 11A (Ta) 9.4A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 2.8V, 10V 4.5V, 10V 2.7V, 10V 10V 10V 4.5V, 10V 2.8V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 17mOhm @ 9A, 10V 9mOhm @ 12A, 10V 10mOhm @ 12A, 10V 8mOhm @ 14A, 10V 730mOhm @ 720mA, 10V 280mOhm @ 1.14A, 10V 12.5mOhm @ 11A, 10V 12mOhm @ 11A, 10V 15.5mOhm @ 9.4A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA 2V @ 250µA 3V @ 250µA 2V @ 250µA 5.5V @ 250µA 5.5V @ 250µA 3V @ 250µA 2V @ 250µA 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 23 nC @ 4.5 V 35 nC @ 4.5 V 19 nC @ 4.5 V 51 nC @ 4.5 V 14 nC @ 10 V 15 nC @ 10 V 23 nC @ 4.5 V 32 nC @ 4.5 V 34 nC @ 4.5 V
Vgs (Max) ±20V ±12V ±20V ±12V ±30V ±30V ±20V ±12V ±12V
Input Capacitance (Ciss) (Max) @ Vds 2000 pF @ 20 V 2480 pF @ 10 V 2050 pF @ 10 V 3150 pF @ 15 V 280 pF @ 25 V 330 pF @ 25 V 2100 pF @ 15 V 2530 pF @ 15 V 2460 pF @ 20 V
FET Feature - - - - - - - - -
Power Dissipation (Max) 2.5W (Ta) 2.5W (Ta) 2.5W (Ta) 2.5W (Ta) 2.5W (Ta) 2.5W (Ta) 2.5W (Ta) 2.5W (Ta) 2.5W (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package 8-SO 8-SO 8-SO 8-SO 8-SO 8-SO 8-SO 8-SO 8-SO
Package / Case 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width)

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