IRF7468
  • Share:

Infineon Technologies IRF7468

Manufacturer No:
IRF7468
Manufacturer:
Infineon Technologies
Package:
Tube
Datasheet:
IRF7468 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 40V 9.4A 8SO
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):40 V
Current - Continuous Drain (Id) @ 25°C:9.4A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:15.5mOhm @ 9.4A, 10V
Vgs(th) (Max) @ Id:2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:34 nC @ 4.5 V
Vgs (Max):±12V
Input Capacitance (Ciss) (Max) @ Vds:2460 pF @ 20 V
FET Feature:- 
Power Dissipation (Max):2.5W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-SO
Package / Case:8-SOIC (0.154", 3.90mm Width)
0 Remaining View Similar

In Stock

-
272

Please send RFQ , we will respond immediately.

Similar Products

Part Number IRF7468 IRF7469   IRF7460   IRF7463   IRF7464   IRF7465   IRF7466   IRF7467  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V 40 V 20 V 30 V 200 V 150 V 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 9.4A (Ta) 9A (Ta) 12A (Ta) 14A (Ta) 1.2A (Ta) 1.9A (Ta) 11A (Ta) 11A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V 4.5V, 10V 2.7V, 10V 10V 10V 4.5V, 10V 2.8V, 10V
Rds On (Max) @ Id, Vgs 15.5mOhm @ 9.4A, 10V 17mOhm @ 9A, 10V 10mOhm @ 12A, 10V 8mOhm @ 14A, 10V 730mOhm @ 720mA, 10V 280mOhm @ 1.14A, 10V 12.5mOhm @ 11A, 10V 12mOhm @ 11A, 10V
Vgs(th) (Max) @ Id 2V @ 250µA 3V @ 250µA 3V @ 250µA 2V @ 250µA 5.5V @ 250µA 5.5V @ 250µA 3V @ 250µA 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 34 nC @ 4.5 V 23 nC @ 4.5 V 19 nC @ 4.5 V 51 nC @ 4.5 V 14 nC @ 10 V 15 nC @ 10 V 23 nC @ 4.5 V 32 nC @ 4.5 V
Vgs (Max) ±12V ±20V ±20V ±12V ±30V ±30V ±20V ±12V
Input Capacitance (Ciss) (Max) @ Vds 2460 pF @ 20 V 2000 pF @ 20 V 2050 pF @ 10 V 3150 pF @ 15 V 280 pF @ 25 V 330 pF @ 25 V 2100 pF @ 15 V 2530 pF @ 15 V
FET Feature - - - - - - - -
Power Dissipation (Max) 2.5W (Ta) 2.5W (Ta) 2.5W (Ta) 2.5W (Ta) 2.5W (Ta) 2.5W (Ta) 2.5W (Ta) 2.5W (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package 8-SO 8-SO 8-SO 8-SO 8-SO 8-SO 8-SO 8-SO
Package / Case 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width)

Related Product By Categories

TSM038N04LCP ROG
TSM038N04LCP ROG
Taiwan Semiconductor Corporation
MOSFET N-CHANNEL 40V 135A TO252
SI3415B-TP
SI3415B-TP
Micro Commercial Co
P-CHANNEL MOSFET, SOT-23
TK15S04N1L,LXHQ
TK15S04N1L,LXHQ
Toshiba Semiconductor and Storage
MOSFET N-CH 40V 15A DPAK
FQPF4N90C
FQPF4N90C
onsemi
MOSFET N-CH 900V 4A TO220F
APT6029SLLG
APT6029SLLG
Microchip Technology
MOSFET N-CH 600V 21A D3PAK
IPW90R1K0C3FKSA1
IPW90R1K0C3FKSA1
Infineon Technologies
IPW90R1 - 900V COOLMOS N-CHANNEL
IXFN48N50
IXFN48N50
IXYS
MOSFET N-CH 500V 48A SOT-227B
IRFR3410PBF
IRFR3410PBF
Infineon Technologies
MOSFET N-CH 100V 31A DPAK
IXFB72N55Q2
IXFB72N55Q2
IXYS
MOSFET N-CH 550V 72A PLUS264
FDD8447L-F085
FDD8447L-F085
onsemi
MOSFET N-CH 40V 50A DPAK
FDD9407-F085
FDD9407-F085
onsemi
MOSFET N-CH 40V 100A DPAK
SQS401ENW-T1_GE3
SQS401ENW-T1_GE3
Vishay Siliconix
MOSFET P-CH 40V 16A PPAK1212-8

Related Product By Brand

BAT17-05E6327HTSA1
BAT17-05E6327HTSA1
Infineon Technologies
RF MIXER/DETECTOR SCHOTTKY DIODE
IRFS7437TRLPBF
IRFS7437TRLPBF
Infineon Technologies
MOSFET N CH 40V 195A D2PAK
AUIRFR4615TRL
AUIRFR4615TRL
Infineon Technologies
MOSFET N-CH 150V 33A DPAK
IRFS5615PBF
IRFS5615PBF
Infineon Technologies
MOSFET N-CH 150V 33A D2PAK
BTS436L2GATMA1
BTS436L2GATMA1
Infineon Technologies
IC PWR SWITCH N-CHAN 1:1 TO263-5
IR3411SPBF
IR3411SPBF
Infineon Technologies
IC SWITCH HIGH SIDE D2PAK-5
CY8C4247BZI-L489
CY8C4247BZI-L489
Infineon Technologies
IC MCU 32BIT 128KB FLSH 124VFBGA
MB90F020CPMT-GS-9148
MB90F020CPMT-GS-9148
Infineon Technologies
IC MCU 120LQFP
S25FL128SAGMFB010
S25FL128SAGMFB010
Infineon Technologies
IC FLASH 128MBIT SPI/QUAD 16SOIC
S29PL127J70BFI040
S29PL127J70BFI040
Infineon Technologies
IC FLASH 128MBIT PARALLEL 56FBGA
S29GL01GT10FHI020
S29GL01GT10FHI020
Infineon Technologies
IC FLASH 1GBIT PARALLEL 64FBGA
STK14D88-NF35
STK14D88-NF35
Infineon Technologies
IC NVSRAM 256KBIT PAR 32SOIC