IRF7467TR
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Infineon Technologies IRF7467TR

Manufacturer No:
IRF7467TR
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Datasheet:
IRF7467TR Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 30V 11A 8SO
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:11A (Ta)
Drive Voltage (Max Rds On, Min Rds On):2.8V, 10V
Rds On (Max) @ Id, Vgs:12mOhm @ 11A, 10V
Vgs(th) (Max) @ Id:2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:32 nC @ 4.5 V
Vgs (Max):±12V
Input Capacitance (Ciss) (Max) @ Vds:2530 pF @ 15 V
FET Feature:- 
Power Dissipation (Max):2.5W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-SO
Package / Case:8-SOIC (0.154", 3.90mm Width)
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Similar Products

Part Number IRF7467TR IRF7468TR   IRF7477TR   IRF7457TR   IRF7460TR   IRF7463TR   IRF7464TR   IRF7466TR  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 40 V 30 V 20 V 20 V 30 V 200 V 30 V
Current - Continuous Drain (Id) @ 25°C 11A (Ta) 9.4A (Ta) 14A (Ta) 15A (Ta) 12A (Ta) 14A (Ta) 1.2A (Ta) 11A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.8V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V 2.7V, 10V 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 12mOhm @ 11A, 10V 15.5mOhm @ 9.4A, 10V 8.5mOhm @ 14A, 10V 7mOhm @ 15A, 10V 10mOhm @ 12A, 10V 8mOhm @ 14A, 10V 730mOhm @ 720mA, 10V 12.5mOhm @ 11A, 10V
Vgs(th) (Max) @ Id 2V @ 250µA 2V @ 250µA 2.5V @ 250µA 3V @ 250µA 3V @ 250µA 2V @ 250µA 5.5V @ 250µA 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 32 nC @ 4.5 V 34 nC @ 4.5 V 38 nC @ 4.5 V 42 nC @ 4.5 V 19 nC @ 4.5 V 51 nC @ 4.5 V 14 nC @ 10 V 23 nC @ 4.5 V
Vgs (Max) ±12V ±12V ±20V ±20V ±20V ±12V ±30V ±20V
Input Capacitance (Ciss) (Max) @ Vds 2530 pF @ 15 V 2460 pF @ 20 V 2710 pF @ 15 V 3100 pF @ 10 V 2050 pF @ 10 V 3150 pF @ 15 V 280 pF @ 25 V 2100 pF @ 15 V
FET Feature - - - - - - - -
Power Dissipation (Max) 2.5W (Ta) 2.5W (Ta) 2.5W (Ta) 2.5W (Ta) 2.5W (Ta) 2.5W (Ta) 2.5W (Ta) 2.5W (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package 8-SO 8-SO 8-SO 8-SO 8-SO 8-SO 8-SO 8-SO
Package / Case 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width)

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