IRF7467PBF
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Infineon Technologies IRF7467PBF

Manufacturer No:
IRF7467PBF
Manufacturer:
Infineon Technologies
Package:
Tube
Datasheet:
IRF7467PBF Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 30V 11A 8SO
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:11A (Ta)
Drive Voltage (Max Rds On, Min Rds On):2.8V, 10V
Rds On (Max) @ Id, Vgs:12mOhm @ 11A, 10V
Vgs(th) (Max) @ Id:2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:32 nC @ 4.5 V
Vgs (Max):±12V
Input Capacitance (Ciss) (Max) @ Vds:2530 pF @ 15 V
FET Feature:- 
Power Dissipation (Max):2.5W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-SO
Package / Case:8-SOIC (0.154", 3.90mm Width)
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Part Number IRF7467PBF IRF7468PBF   IRF7469PBF   IRF7477PBF   IRF7457PBF   IRF7460PBF   IRF7463PBF   IRF7464PBF   IRF7465PBF   IRF7466PBF  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Obsolete Discontinued at Digi-Key Discontinued at Digi-Key Obsolete Discontinued at Digi-Key Obsolete Discontinued at Digi-Key Obsolete Discontinued at Digi-Key Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 40 V 40 V 30 V 20 V 20 V 30 V 200 V 150 V 30 V
Current - Continuous Drain (Id) @ 25°C 11A (Ta) 9.4A (Ta) 9A (Ta) 14A (Ta) 15A (Ta) 12A (Ta) 14A (Ta) 1.2A (Ta) 1.9A (Ta) 11A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.8V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V 2.7V, 10V 10V 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 12mOhm @ 11A, 10V 15.5mOhm @ 9.4A, 10V 17mOhm @ 9A, 10V 8.5mOhm @ 14A, 10V 7mOhm @ 15A, 10V 10mOhm @ 12A, 10V 8mOhm @ 14A, 10V 730mOhm @ 720mA, 10V 280mOhm @ 1.14A, 10V 12.5mOhm @ 11A, 10V
Vgs(th) (Max) @ Id 2V @ 250µA 2V @ 250µA 3V @ 250µA 2.5V @ 250µA 3V @ 250µA 3V @ 250µA 2V @ 250µA 5.5V @ 250µA 5.5V @ 250µA 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 32 nC @ 4.5 V 34 nC @ 4.5 V 23 nC @ 4.5 V 38 nC @ 4.5 V 42 nC @ 4.5 V 19 nC @ 4.5 V 51 nC @ 4.5 V 14 nC @ 10 V 15 nC @ 10 V 23 nC @ 4.5 V
Vgs (Max) ±12V ±12V ±20V ±20V ±20V ±20V ±12V ±30V ±30V ±20V
Input Capacitance (Ciss) (Max) @ Vds 2530 pF @ 15 V 2460 pF @ 20 V 2000 pF @ 20 V 2710 pF @ 15 V 3100 pF @ 10 V 2050 pF @ 10 V 3150 pF @ 15 V 280 pF @ 25 V 330 pF @ 25 V 2100 pF @ 15 V
FET Feature - - - - - - - - - -
Power Dissipation (Max) 2.5W (Ta) 2.5W (Ta) 2.5W (Ta) 2.5W (Ta) 2.5W (Ta) 2.5W (Ta) 2.5W (Ta) 2.5W (Ta) 2.5W (Ta) 2.5W (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package 8-SO 8-SO 8-SO 8-SO 8-SO 8-SO 8-SO 8-SO 8-SO 8-SO
Package / Case 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width)

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