IRF7467
  • Share:

Infineon Technologies IRF7467

Manufacturer No:
IRF7467
Manufacturer:
Infineon Technologies
Package:
Tube
Datasheet:
IRF7467 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 30V 11A 8SO
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:11A (Ta)
Drive Voltage (Max Rds On, Min Rds On):2.8V, 10V
Rds On (Max) @ Id, Vgs:12mOhm @ 11A, 10V
Vgs(th) (Max) @ Id:2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:32 nC @ 4.5 V
Vgs (Max):±12V
Input Capacitance (Ciss) (Max) @ Vds:2530 pF @ 15 V
FET Feature:- 
Power Dissipation (Max):2.5W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-SO
Package / Case:8-SOIC (0.154", 3.90mm Width)
0 Remaining View Similar

In Stock

-
602

Please send RFQ , we will respond immediately.

Similar Products

Part Number IRF7467 IRF7468   IRF7469   IRF7477   IRF7457   IRF7460   IRF7463   IRF7464   IRF7465   IRF7466  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 40 V 40 V 30 V 20 V 20 V 30 V 200 V 150 V 30 V
Current - Continuous Drain (Id) @ 25°C 11A (Ta) 9.4A (Ta) 9A (Ta) 14A (Ta) 15A (Ta) 12A (Ta) 14A (Ta) 1.2A (Ta) 1.9A (Ta) 11A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.8V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V 2.7V, 10V 10V 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 12mOhm @ 11A, 10V 15.5mOhm @ 9.4A, 10V 17mOhm @ 9A, 10V 8.5mOhm @ 14A, 10V 7mOhm @ 15A, 10V 10mOhm @ 12A, 10V 8mOhm @ 14A, 10V 730mOhm @ 720mA, 10V 280mOhm @ 1.14A, 10V 12.5mOhm @ 11A, 10V
Vgs(th) (Max) @ Id 2V @ 250µA 2V @ 250µA 3V @ 250µA 2.5V @ 250µA 3V @ 250µA 3V @ 250µA 2V @ 250µA 5.5V @ 250µA 5.5V @ 250µA 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 32 nC @ 4.5 V 34 nC @ 4.5 V 23 nC @ 4.5 V 38 nC @ 4.5 V 42 nC @ 4.5 V 19 nC @ 4.5 V 51 nC @ 4.5 V 14 nC @ 10 V 15 nC @ 10 V 23 nC @ 4.5 V
Vgs (Max) ±12V ±12V ±20V ±20V ±20V ±20V ±12V ±30V ±30V ±20V
Input Capacitance (Ciss) (Max) @ Vds 2530 pF @ 15 V 2460 pF @ 20 V 2000 pF @ 20 V 2710 pF @ 15 V 3100 pF @ 10 V 2050 pF @ 10 V 3150 pF @ 15 V 280 pF @ 25 V 330 pF @ 25 V 2100 pF @ 15 V
FET Feature - - - - - - - - - -
Power Dissipation (Max) 2.5W (Ta) 2.5W (Ta) 2.5W (Ta) 2.5W (Ta) 2.5W (Ta) 2.5W (Ta) 2.5W (Ta) 2.5W (Ta) 2.5W (Ta) 2.5W (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package 8-SO 8-SO 8-SO 8-SO 8-SO 8-SO 8-SO 8-SO 8-SO 8-SO
Package / Case 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width)

Related Product By Categories

PMZB390UNEYL
PMZB390UNEYL
Nexperia USA Inc.
MOSFET N-CH 30V 900MA DFN1006B-3
HUF75617D3
HUF75617D3
Fairchild Semiconductor
MOSFET N-CH 100V 16A IPAK
IRFD9113
IRFD9113
Harris Corporation
-0.6A, -80V, 1.6 OHM, P-CHANNEL
ZXMN2069FTA
ZXMN2069FTA
Diodes Incorporated
MOSFET N-CH SOT23-3
APT8020JLL
APT8020JLL
Microchip Technology
MOSFET N-CH 800V 33A ISOTOP
IRFL210TRPBF
IRFL210TRPBF
Vishay Siliconix
MOSFET N-CH 200V 960MA SOT223
FDS3572
FDS3572
onsemi
MOSFET N-CH 80V 8.9A 8SOIC
PSMN026-80YS,115
PSMN026-80YS,115
Nexperia USA Inc.
MOSFET N-CH 80V 34A LFPAK56
MCT04P06-TP
MCT04P06-TP
Micro Commercial Co
MOSFET P-CH 60V 3.5A SOT223
IRL3715ZCSTRLP
IRL3715ZCSTRLP
Infineon Technologies
MOSFET N-CH 20V 50A D2PAK
FKI06051
FKI06051
Sanken
MOSFET N-CH 60V 69A TO220F
IRL40S212
IRL40S212
Infineon Technologies
MOSFET N-CH 40V 195A D2PAK

Related Product By Brand

ESD103B102ELE6327XTMA1
ESD103B102ELE6327XTMA1
Infineon Technologies
TVS DIODE 15VWM 48VC TSLP-2-20
BC858CWE6327BTSA1
BC858CWE6327BTSA1
Infineon Technologies
TRANS PNP 30V 0.1A SOT323
ISZ230N10NM6ATMA1
ISZ230N10NM6ATMA1
Infineon Technologies
TRENCH >=100V PG-TSDSON-8
BUZ31 E3045A
BUZ31 E3045A
Infineon Technologies
MOSFET N-CH 200V 14.5A D2PAK
IPI80N06S207AKSA1
IPI80N06S207AKSA1
Infineon Technologies
MOSFET N-CH 55V 80A TO262-3
AUIRFS8408
AUIRFS8408
Infineon Technologies
MOSFET N-CH 40V 195A D2PAK
FP50R12N2T7B11BPSA1
FP50R12N2T7B11BPSA1
Infineon Technologies
LOW POWER ECONO AG-ECONO2B-711
XMC4500F144K768ACXQMA1
XMC4500F144K768ACXQMA1
Infineon Technologies
IC MCU 32BIT 768KB FLASH 144LQFP
MB91F365GBPMT-GE2
MB91F365GBPMT-GE2
Infineon Technologies
IC MCU 32BIT 512KB FLASH 120LQFP
CY62137FV30LL-55ZSXE
CY62137FV30LL-55ZSXE
Infineon Technologies
IC SRAM 2MBIT PARALLEL 44TSOP II
CY7C1350G-133AXI
CY7C1350G-133AXI
Infineon Technologies
IC SRAM 4.5MBIT PARALLEL 100TQFP
CY14B101NA-ZS45XIT
CY14B101NA-ZS45XIT
Infineon Technologies
IC NVSRAM 1MBIT PAR 44TSOP II