IRF7465
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Infineon Technologies IRF7465

Manufacturer No:
IRF7465
Manufacturer:
Infineon Technologies
Package:
Tube
Datasheet:
IRF7465 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 150V 1.9A 8SO
Delivery:
Payment:
iso14001
iso45001
iso9001
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):150 V
Current - Continuous Drain (Id) @ 25°C:1.9A (Ta)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:280mOhm @ 1.14A, 10V
Vgs(th) (Max) @ Id:5.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:15 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:330 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):2.5W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-SO
Package / Case:8-SOIC (0.154", 3.90mm Width)
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Similar Products

Part Number IRF7465 IRF7466   IRF7467   IRF7468   IRF7469   IRF7425   IRF7455   IRF7460   IRF7463   IRF7464  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel P-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 150 V 30 V 30 V 40 V 40 V 20 V 30 V 20 V 30 V 200 V
Current - Continuous Drain (Id) @ 25°C 1.9A (Ta) 11A (Ta) 11A (Ta) 9.4A (Ta) 9A (Ta) 15A (Ta) 15A (Ta) 12A (Ta) 14A (Ta) 1.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V 4.5V, 10V 2.8V, 10V 4.5V, 10V 4.5V, 10V 2.5V, 4.5V 2.8V, 10V 4.5V, 10V 2.7V, 10V 10V
Rds On (Max) @ Id, Vgs 280mOhm @ 1.14A, 10V 12.5mOhm @ 11A, 10V 12mOhm @ 11A, 10V 15.5mOhm @ 9.4A, 10V 17mOhm @ 9A, 10V 8.2mOhm @ 15A, 4.5V 7.5mOhm @ 15A, 10V 10mOhm @ 12A, 10V 8mOhm @ 14A, 10V 730mOhm @ 720mA, 10V
Vgs(th) (Max) @ Id 5.5V @ 250µA 3V @ 250µA 2V @ 250µA 2V @ 250µA 3V @ 250µA 1.2V @ 250µA 2V @ 250µA 3V @ 250µA 2V @ 250µA 5.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 15 nC @ 10 V 23 nC @ 4.5 V 32 nC @ 4.5 V 34 nC @ 4.5 V 23 nC @ 4.5 V 130 nC @ 4.5 V 56 nC @ 5 V 19 nC @ 4.5 V 51 nC @ 4.5 V 14 nC @ 10 V
Vgs (Max) ±30V ±20V ±12V ±12V ±20V ±12V ±12V ±20V ±12V ±30V
Input Capacitance (Ciss) (Max) @ Vds 330 pF @ 25 V 2100 pF @ 15 V 2530 pF @ 15 V 2460 pF @ 20 V 2000 pF @ 20 V 7980 pF @ 15 V 3480 pF @ 25 V 2050 pF @ 10 V 3150 pF @ 15 V 280 pF @ 25 V
FET Feature - - - - - - - - - -
Power Dissipation (Max) 2.5W (Ta) 2.5W (Ta) 2.5W (Ta) 2.5W (Ta) 2.5W (Ta) 2.5W (Ta) 2.5W (Ta) 2.5W (Ta) 2.5W (Ta) 2.5W (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package 8-SO 8-SO 8-SO 8-SO 8-SO 8-SO 8-SO 8-SO 8-SO 8-SO
Package / Case 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width)

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