IRF7464TR
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Infineon Technologies IRF7464TR

Manufacturer No:
IRF7464TR
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Datasheet:
IRF7464TR Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 200V 1.2A 8SO
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):200 V
Current - Continuous Drain (Id) @ 25°C:1.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:730mOhm @ 720mA, 10V
Vgs(th) (Max) @ Id:5.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:14 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:280 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):2.5W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-SO
Package / Case:8-SOIC (0.154", 3.90mm Width)
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Similar Products

Part Number IRF7464TR IRF7466TR   IRF7467TR   IRF7468TR   IRF7494TR   IRF7424TR   IRF7460TR   IRF7463TR  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel P-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200 V 30 V 30 V 40 V 150 V 30 V 20 V 30 V
Current - Continuous Drain (Id) @ 25°C 1.2A (Ta) 11A (Ta) 11A (Ta) 9.4A (Ta) 5.2A (Ta) 11A (Tc) 12A (Ta) 14A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V 4.5V, 10V 2.8V, 10V 4.5V, 10V - 4.5V, 10V 4.5V, 10V 2.7V, 10V
Rds On (Max) @ Id, Vgs 730mOhm @ 720mA, 10V 12.5mOhm @ 11A, 10V 12mOhm @ 11A, 10V 15.5mOhm @ 9.4A, 10V 44mOhm @ 3.1A, 10V 13.5mOhm @ 11A, 10V 10mOhm @ 12A, 10V 8mOhm @ 14A, 10V
Vgs(th) (Max) @ Id 5.5V @ 250µA 3V @ 250µA 2V @ 250µA 2V @ 250µA 4V @ 250µA 2.5V @ 250µA 3V @ 250µA 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 14 nC @ 10 V 23 nC @ 4.5 V 32 nC @ 4.5 V 34 nC @ 4.5 V 54 nC @ 10 V 110 nC @ 10 V 19 nC @ 4.5 V 51 nC @ 4.5 V
Vgs (Max) ±30V ±20V ±12V ±12V - ±20V ±20V ±12V
Input Capacitance (Ciss) (Max) @ Vds 280 pF @ 25 V 2100 pF @ 15 V 2530 pF @ 15 V 2460 pF @ 20 V 1750 pF @ 25 V 4030 pF @ 25 V 2050 pF @ 10 V 3150 pF @ 15 V
FET Feature - - - - - - - -
Power Dissipation (Max) 2.5W (Ta) 2.5W (Ta) 2.5W (Ta) 2.5W (Ta) - 2.5W (Ta) 2.5W (Ta) 2.5W (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) - -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package 8-SO 8-SO 8-SO 8-SO 8-SO 8-SO 8-SO 8-SO
Package / Case 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width)

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