IRF7464
  • Share:

Infineon Technologies IRF7464

Manufacturer No:
IRF7464
Manufacturer:
Infineon Technologies
Package:
Tube
Datasheet:
IRF7464 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 200V 1.2A 8SO
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):200 V
Current - Continuous Drain (Id) @ 25°C:1.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:730mOhm @ 720mA, 10V
Vgs(th) (Max) @ Id:5.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:14 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:280 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):2.5W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-SO
Package / Case:8-SOIC (0.154", 3.90mm Width)
0 Remaining View Similar

In Stock

-
298

Please send RFQ , we will respond immediately.

Similar Products

Part Number IRF7464 IRF7466   IRF7467   IRF7468   IRF7469   IRF7465   IRF744   IRF7460   IRF7463  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Vishay Siliconix Infineon Technologies Infineon Technologies
Product Status Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200 V 30 V 30 V 40 V 40 V 150 V 450 V 20 V 30 V
Current - Continuous Drain (Id) @ 25°C 1.2A (Ta) 11A (Ta) 11A (Ta) 9.4A (Ta) 9A (Ta) 1.9A (Ta) 8.8A (Tc) 12A (Ta) 14A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V 4.5V, 10V 2.8V, 10V 4.5V, 10V 4.5V, 10V 10V 10V 4.5V, 10V 2.7V, 10V
Rds On (Max) @ Id, Vgs 730mOhm @ 720mA, 10V 12.5mOhm @ 11A, 10V 12mOhm @ 11A, 10V 15.5mOhm @ 9.4A, 10V 17mOhm @ 9A, 10V 280mOhm @ 1.14A, 10V 630mOhm @ 5.3A, 10V 10mOhm @ 12A, 10V 8mOhm @ 14A, 10V
Vgs(th) (Max) @ Id 5.5V @ 250µA 3V @ 250µA 2V @ 250µA 2V @ 250µA 3V @ 250µA 5.5V @ 250µA 4V @ 250µA 3V @ 250µA 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 14 nC @ 10 V 23 nC @ 4.5 V 32 nC @ 4.5 V 34 nC @ 4.5 V 23 nC @ 4.5 V 15 nC @ 10 V 80 nC @ 10 V 19 nC @ 4.5 V 51 nC @ 4.5 V
Vgs (Max) ±30V ±20V ±12V ±12V ±20V ±30V ±20V ±20V ±12V
Input Capacitance (Ciss) (Max) @ Vds 280 pF @ 25 V 2100 pF @ 15 V 2530 pF @ 15 V 2460 pF @ 20 V 2000 pF @ 20 V 330 pF @ 25 V 1400 pF @ 25 V 2050 pF @ 10 V 3150 pF @ 15 V
FET Feature - - - - - - - - -
Power Dissipation (Max) 2.5W (Ta) 2.5W (Ta) 2.5W (Ta) 2.5W (Ta) 2.5W (Ta) 2.5W (Ta) 125W (Tc) 2.5W (Ta) 2.5W (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Through Hole Surface Mount Surface Mount
Supplier Device Package 8-SO 8-SO 8-SO 8-SO 8-SO 8-SO TO-220AB 8-SO 8-SO
Package / Case 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) TO-220-3 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width)

Related Product By Categories

IXFH270N06T3
IXFH270N06T3
IXYS
MOSFET N-CH 60V 270A TO247
NDS8425
NDS8425
Fairchild Semiconductor
SMALL SIGNAL FIELD-EFFECT TRANSI
STF12N65M5
STF12N65M5
STMicroelectronics
MOSFET N-CH 650V 8.5A TO220FP
SIRA64DP-T1-RE3
SIRA64DP-T1-RE3
Vishay Siliconix
MOSFET N-CH 30V 60A PPAK SO-8
PMPB11EN,115
PMPB11EN,115
Nexperia USA Inc.
MOSFET N-CH 30V 9A DFN2020MD-6
BSC100N03LSG
BSC100N03LSG
Infineon Technologies
N-CHANNEL POWER MOSFET
PJL9422_R2_00001
PJL9422_R2_00001
Panjit International Inc.
40V N-CHANNEL ENHANCEMENT MODE M
BTS282ZE3230
BTS282ZE3230
Infineon Technologies
N-CHANNEL POWER MOSFET
DMN3112SQ-7
DMN3112SQ-7
Diodes Incorporated
MOSFET BVDSS: 25V~30V SOT23 T&R
IPI120N06S402AKSA2
IPI120N06S402AKSA2
Infineon Technologies
MOSFET N-CH 60V 120A TO262-3
SPI07N60S5HKSA1
SPI07N60S5HKSA1
Infineon Technologies
MOSFET N-CH 600V 7.3A TO262-3
AOTF18N65L
AOTF18N65L
Alpha & Omega Semiconductor Inc.
MOSFET N-CH 650V 18A TO220-3F

Related Product By Brand

STT800N18P55XPSA1
STT800N18P55XPSA1
Infineon Technologies
THYR / DIODE MODULE DK
BFS17SE6327HTSA1
BFS17SE6327HTSA1
Infineon Technologies
RF TRANS 2NPN 15V 1.4GHZ SOT363
IPD50R520CP
IPD50R520CP
Infineon Technologies
MOSFET N-CH 550V 7.1A TO252-3
TLE92623QXXUMA1
TLE92623QXXUMA1
Infineon Technologies
IC INTERFACE SPECIALIZED 48VQFN
BTS70122EPAXUMA1
BTS70122EPAXUMA1
Infineon Technologies
IC PWR SWTCH N-CHAN 1:1 TSDSO-14
TLF1963TBATMA1
TLF1963TBATMA1
Infineon Technologies
IC REG LIN POS ADJ 1.5A TO263-5
CHL8328-19CRT
CHL8328-19CRT
Infineon Technologies
IC REG CTRLR DDR 2OUT 56VQFN
KP108PSXTMA1
KP108PSXTMA1
Infineon Technologies
AUTOMOTIVE PRESSURE SENSOR
MB91213APMC-GS-137K5E1
MB91213APMC-GS-137K5E1
Infineon Technologies
IC MCU 32BIT 544KB MROM 144LQFP
CY62128EV30LL-45SXIT
CY62128EV30LL-45SXIT
Infineon Technologies
IC SRAM 1MBIT PARALLEL 32SOIC
S27KS0641DPBHB023
S27KS0641DPBHB023
Infineon Technologies
IC PSRAM 64MBIT PARALLEL 24FBGA
S29GL01GT12TFM023
S29GL01GT12TFM023
Infineon Technologies
IC FLASH 1GBIT PARALLEL 56TSOP