IRF7464
  • Share:

Infineon Technologies IRF7464

Manufacturer No:
IRF7464
Manufacturer:
Infineon Technologies
Package:
Tube
Datasheet:
IRF7464 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 200V 1.2A 8SO
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):200 V
Current - Continuous Drain (Id) @ 25°C:1.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:730mOhm @ 720mA, 10V
Vgs(th) (Max) @ Id:5.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:14 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:280 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):2.5W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-SO
Package / Case:8-SOIC (0.154", 3.90mm Width)
0 Remaining View Similar

In Stock

-
298

Please send RFQ , we will respond immediately.

Similar Products

Part Number IRF7464 IRF7466   IRF7467   IRF7468   IRF7469   IRF7465   IRF744   IRF7460   IRF7463  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Vishay Siliconix Infineon Technologies Infineon Technologies
Product Status Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200 V 30 V 30 V 40 V 40 V 150 V 450 V 20 V 30 V
Current - Continuous Drain (Id) @ 25°C 1.2A (Ta) 11A (Ta) 11A (Ta) 9.4A (Ta) 9A (Ta) 1.9A (Ta) 8.8A (Tc) 12A (Ta) 14A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V 4.5V, 10V 2.8V, 10V 4.5V, 10V 4.5V, 10V 10V 10V 4.5V, 10V 2.7V, 10V
Rds On (Max) @ Id, Vgs 730mOhm @ 720mA, 10V 12.5mOhm @ 11A, 10V 12mOhm @ 11A, 10V 15.5mOhm @ 9.4A, 10V 17mOhm @ 9A, 10V 280mOhm @ 1.14A, 10V 630mOhm @ 5.3A, 10V 10mOhm @ 12A, 10V 8mOhm @ 14A, 10V
Vgs(th) (Max) @ Id 5.5V @ 250µA 3V @ 250µA 2V @ 250µA 2V @ 250µA 3V @ 250µA 5.5V @ 250µA 4V @ 250µA 3V @ 250µA 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 14 nC @ 10 V 23 nC @ 4.5 V 32 nC @ 4.5 V 34 nC @ 4.5 V 23 nC @ 4.5 V 15 nC @ 10 V 80 nC @ 10 V 19 nC @ 4.5 V 51 nC @ 4.5 V
Vgs (Max) ±30V ±20V ±12V ±12V ±20V ±30V ±20V ±20V ±12V
Input Capacitance (Ciss) (Max) @ Vds 280 pF @ 25 V 2100 pF @ 15 V 2530 pF @ 15 V 2460 pF @ 20 V 2000 pF @ 20 V 330 pF @ 25 V 1400 pF @ 25 V 2050 pF @ 10 V 3150 pF @ 15 V
FET Feature - - - - - - - - -
Power Dissipation (Max) 2.5W (Ta) 2.5W (Ta) 2.5W (Ta) 2.5W (Ta) 2.5W (Ta) 2.5W (Ta) 125W (Tc) 2.5W (Ta) 2.5W (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Through Hole Surface Mount Surface Mount
Supplier Device Package 8-SO 8-SO 8-SO 8-SO 8-SO 8-SO TO-220AB 8-SO 8-SO
Package / Case 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) TO-220-3 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width)

Related Product By Categories

DMN65D8LFB-7
DMN65D8LFB-7
Diodes Incorporated
MOSFET N-CH 60V 260MA 3DFN
FQPF2P25
FQPF2P25
Fairchild Semiconductor
MOSFET P-CH 250V 1.8A TO220F
2SK3815-DL-E
2SK3815-DL-E
Sanyo
2SK3815 - N-CHANNEL, MOSFET
NTBS9D0N10MC
NTBS9D0N10MC
onsemi
MOSFET N-CH 100V 14A/60A TO263
APT34F100B2
APT34F100B2
Microchip Technology
MOSFET N-CH 1000V 35A T-MAX
APT5010JVR
APT5010JVR
Microchip Technology
MOSFET N-CH 500V 44A ISOTOP
FDG316P
FDG316P
Fairchild Semiconductor
SMALL SIGNAL FIELD-EFFECT TRANSI
IRLI530N
IRLI530N
Infineon Technologies
MOSFET N-CH 100V 12A TO220AB FP
IXUV170N075
IXUV170N075
IXYS
MOSFET N-CH 75V 175A PLUS220
IPP037N08N3GE8181XKSA1
IPP037N08N3GE8181XKSA1
Infineon Technologies
MOSFET N-CH 80V 100A TO220-3
NP22N055SLE-E1-AY
NP22N055SLE-E1-AY
Renesas Electronics America Inc
MOSFET N-CH 55V 22A TO252
NVMFS5C450NWFT1G
NVMFS5C450NWFT1G
onsemi
MOSFET N-CH 40V 5DFN

Related Product By Brand

IPW60R330P6FKSA1
IPW60R330P6FKSA1
Infineon Technologies
MOSFET N-CH 600V 12A TO247-3
FS225R12OE4BOSA1
FS225R12OE4BOSA1
Infineon Technologies
IGBT MOD 1200V 350A 1250W
TLE72422GXUMA1
TLE72422GXUMA1
Infineon Technologies
IC CURRENT SOURCE DSO28
BTS72002EPAXUMA1
BTS72002EPAXUMA1
Infineon Technologies
IC PWR SWTCH N-CHAN 1:1 TSDSO-14
CY9AFA44MBPMC1-G-JNE2
CY9AFA44MBPMC1-G-JNE2
Infineon Technologies
IC MCU 32BIT 288KB FLASH 80LQFP
S6E2C1AH0AGV2000A
S6E2C1AH0AGV2000A
Infineon Technologies
IC MCU 32BIT 2MB FLASH 144LQFP
MB90352ASPMC-GS-104E1
MB90352ASPMC-GS-104E1
Infineon Technologies
IC MCU 16BIT 128KB MROM 64LQFP
MB90022PF-GS-466E1
MB90022PF-GS-466E1
Infineon Technologies
IC MCU 16BIT 100QFP
S29PL032J70BFI072
S29PL032J70BFI072
Infineon Technologies
IC FLASH 32MBIT PARALLEL 56FBGA
CY7C1470BV25-200BZXC
CY7C1470BV25-200BZXC
Infineon Technologies
IC SRAM 72MBIT PARALLEL 165FBGA
CY7C1570V18-375BZXC
CY7C1570V18-375BZXC
Infineon Technologies
IC SRAM 72MBIT PARALLEL 165FBGA
S70GL02GP11FAIR12
S70GL02GP11FAIR12
Infineon Technologies
IC FLASH 2GBIT PARALLEL 64FBGA