IRF7460
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Infineon Technologies IRF7460

Manufacturer No:
IRF7460
Manufacturer:
Infineon Technologies
Package:
Tube
Datasheet:
IRF7460 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 20V 12A 8SO
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:12A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:10mOhm @ 12A, 10V
Vgs(th) (Max) @ Id:3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:19 nC @ 4.5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:2050 pF @ 10 V
FET Feature:- 
Power Dissipation (Max):2.5W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-SO
Package / Case:8-SOIC (0.154", 3.90mm Width)
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Similar Products

Part Number IRF7460 IRF7463   IRF7464   IRF7466   IRF7467   IRF7468   IRF7469   IRF7465   IRF7420   IRF7450  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel P-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V 30 V 200 V 30 V 30 V 40 V 40 V 150 V 12 V 200 V
Current - Continuous Drain (Id) @ 25°C 12A (Ta) 14A (Ta) 1.2A (Ta) 11A (Ta) 11A (Ta) 9.4A (Ta) 9A (Ta) 1.9A (Ta) 11.5A (Tc) 2.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 2.7V, 10V 10V 4.5V, 10V 2.8V, 10V 4.5V, 10V 4.5V, 10V 10V 1.8V, 4.5V 10V
Rds On (Max) @ Id, Vgs 10mOhm @ 12A, 10V 8mOhm @ 14A, 10V 730mOhm @ 720mA, 10V 12.5mOhm @ 11A, 10V 12mOhm @ 11A, 10V 15.5mOhm @ 9.4A, 10V 17mOhm @ 9A, 10V 280mOhm @ 1.14A, 10V 14mOhm @ 11.5A, 4.5V 170mOhm @ 1.5A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA 2V @ 250µA 5.5V @ 250µA 3V @ 250µA 2V @ 250µA 2V @ 250µA 3V @ 250µA 5.5V @ 250µA 900mV @ 250µA 5.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 19 nC @ 4.5 V 51 nC @ 4.5 V 14 nC @ 10 V 23 nC @ 4.5 V 32 nC @ 4.5 V 34 nC @ 4.5 V 23 nC @ 4.5 V 15 nC @ 10 V 38 nC @ 4.5 V 39 nC @ 10 V
Vgs (Max) ±20V ±12V ±30V ±20V ±12V ±12V ±20V ±30V ±8V ±30V
Input Capacitance (Ciss) (Max) @ Vds 2050 pF @ 10 V 3150 pF @ 15 V 280 pF @ 25 V 2100 pF @ 15 V 2530 pF @ 15 V 2460 pF @ 20 V 2000 pF @ 20 V 330 pF @ 25 V 3529 pF @ 10 V 940 pF @ 25 V
FET Feature - - - - - - - - - -
Power Dissipation (Max) 2.5W (Ta) 2.5W (Ta) 2.5W (Ta) 2.5W (Ta) 2.5W (Ta) 2.5W (Ta) 2.5W (Ta) 2.5W (Ta) 2.5W (Ta) 2.5W (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package 8-SO 8-SO 8-SO 8-SO 8-SO 8-SO 8-SO 8-SO 8-SO 8-SO
Package / Case 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width)

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