IRF7459
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Infineon Technologies IRF7459

Manufacturer No:
IRF7459
Manufacturer:
Infineon Technologies
Package:
Tube
Datasheet:
IRF7459 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 20V 12A 8SO
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:12A (Ta)
Drive Voltage (Max Rds On, Min Rds On):2.8V, 10V
Rds On (Max) @ Id, Vgs:9mOhm @ 12A, 10V
Vgs(th) (Max) @ Id:2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:35 nC @ 4.5 V
Vgs (Max):±12V
Input Capacitance (Ciss) (Max) @ Vds:2480 pF @ 10 V
FET Feature:- 
Power Dissipation (Max):2.5W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-SO
Package / Case:8-SOIC (0.154", 3.90mm Width)
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Similar Products

Part Number IRF7459 IRF7469   IRF7450   IRF7451   IRF7452   IRF7453   IRF7455   IRF7457  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V 40 V 200 V 150 V 100 V 250 V 30 V 20 V
Current - Continuous Drain (Id) @ 25°C 12A (Ta) 9A (Ta) 2.5A (Ta) 3.6A (Ta) 4.5A (Ta) 2.2A (Ta) 15A (Ta) 15A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.8V, 10V 4.5V, 10V 10V 10V 10V 10V 2.8V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 9mOhm @ 12A, 10V 17mOhm @ 9A, 10V 170mOhm @ 1.5A, 10V 90mOhm @ 2.2A, 10V 60mOhm @ 2.7A, 10V 230mOhm @ 1.3A, 10V 7.5mOhm @ 15A, 10V 7mOhm @ 15A, 10V
Vgs(th) (Max) @ Id 2V @ 250µA 3V @ 250µA 5.5V @ 250µA 5.5V @ 250µA 5.5V @ 250µA 5.5V @ 250µA 2V @ 250µA 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 35 nC @ 4.5 V 23 nC @ 4.5 V 39 nC @ 10 V 41 nC @ 10 V 50 nC @ 10 V 38 nC @ 10 V 56 nC @ 5 V 42 nC @ 4.5 V
Vgs (Max) ±12V ±20V ±30V ±30V ±30V ±30V ±12V ±20V
Input Capacitance (Ciss) (Max) @ Vds 2480 pF @ 10 V 2000 pF @ 20 V 940 pF @ 25 V 990 pF @ 25 V 930 pF @ 25 V 930 pF @ 25 V 3480 pF @ 25 V 3100 pF @ 10 V
FET Feature - - - - - - - -
Power Dissipation (Max) 2.5W (Ta) 2.5W (Ta) 2.5W (Ta) 2.5W (Ta) 2.5W (Ta) 2.5W (Ta) 2.5W (Ta) 2.5W (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package 8-SO 8-SO 8-SO 8-SO 8-SO 8-SO 8-SO 8-SO
Package / Case 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width)

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