IRF7458TR
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Infineon Technologies IRF7458TR

Manufacturer No:
IRF7458TR
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Datasheet:
IRF7458TR Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 30V 14A 8SO
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:14A (Ta)
Drive Voltage (Max Rds On, Min Rds On):10V, 16V
Rds On (Max) @ Id, Vgs:8mOhm @ 14A, 16V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:59 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:2410 pF @ 15 V
FET Feature:- 
Power Dissipation (Max):2.5W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-SO
Package / Case:8-SOIC (0.154", 3.90mm Width)
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Similar Products

Part Number IRF7458TR IRF7459TR   IRF7468TR   IRF7450TR   IRF7451TR   IRF7452TR   IRF7453TR   IRF7457TR  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 20 V 40 V 200 V 150 V 100 V 250 V 20 V
Current - Continuous Drain (Id) @ 25°C 14A (Ta) 12A (Ta) 9.4A (Ta) 2.5A (Ta) 3.6A (Ta) 4.5A (Ta) 2.2A (Ta) 15A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V, 16V 2.8V, 10V 4.5V, 10V 10V 10V 10V 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 8mOhm @ 14A, 16V 9mOhm @ 12A, 10V 15.5mOhm @ 9.4A, 10V 170mOhm @ 1.5A, 10V 90mOhm @ 2.2A, 10V 60mOhm @ 2.7A, 10V 230mOhm @ 1.3A, 10V 7mOhm @ 15A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 2V @ 250µA 2V @ 250µA 5.5V @ 250µA 5.5V @ 250µA 5.5V @ 250µA 5.5V @ 250µA 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 59 nC @ 10 V 35 nC @ 4.5 V 34 nC @ 4.5 V 39 nC @ 10 V 41 nC @ 10 V 50 nC @ 10 V 38 nC @ 10 V 42 nC @ 4.5 V
Vgs (Max) ±30V ±12V ±12V ±30V ±30V ±30V ±30V ±20V
Input Capacitance (Ciss) (Max) @ Vds 2410 pF @ 15 V 2480 pF @ 10 V 2460 pF @ 20 V 940 pF @ 25 V 990 pF @ 25 V 930 pF @ 25 V 930 pF @ 25 V 3100 pF @ 10 V
FET Feature - - - - - - - -
Power Dissipation (Max) 2.5W (Ta) 2.5W (Ta) 2.5W (Ta) 2.5W (Ta) 2.5W (Ta) 2.5W (Ta) 2.5W (Ta) 2.5W (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package 8-SO 8-SO 8-SO 8-SO 8-SO 8-SO 8-SO 8-SO
Package / Case 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width)

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