IRF7455
  • Share:

Infineon Technologies IRF7455

Manufacturer No:
IRF7455
Manufacturer:
Infineon Technologies
Package:
Tube
Datasheet:
IRF7455 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 30V 15A 8SO
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:15A (Ta)
Drive Voltage (Max Rds On, Min Rds On):2.8V, 10V
Rds On (Max) @ Id, Vgs:7.5mOhm @ 15A, 10V
Vgs(th) (Max) @ Id:2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:56 nC @ 5 V
Vgs (Max):±12V
Input Capacitance (Ciss) (Max) @ Vds:3480 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):2.5W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-SO
Package / Case:8-SOIC (0.154", 3.90mm Width)
0 Remaining View Similar

In Stock

-
382

Please send RFQ , we will respond immediately.

Similar Products

Part Number IRF7455 IRF7457   IRF7459   IRF7465   IRF7425   IRF7450   IRF7451   IRF7452   IRF7453  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel P-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 20 V 20 V 150 V 20 V 200 V 150 V 100 V 250 V
Current - Continuous Drain (Id) @ 25°C 15A (Ta) 15A (Ta) 12A (Ta) 1.9A (Ta) 15A (Ta) 2.5A (Ta) 3.6A (Ta) 4.5A (Ta) 2.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.8V, 10V 4.5V, 10V 2.8V, 10V 10V 2.5V, 4.5V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 7.5mOhm @ 15A, 10V 7mOhm @ 15A, 10V 9mOhm @ 12A, 10V 280mOhm @ 1.14A, 10V 8.2mOhm @ 15A, 4.5V 170mOhm @ 1.5A, 10V 90mOhm @ 2.2A, 10V 60mOhm @ 2.7A, 10V 230mOhm @ 1.3A, 10V
Vgs(th) (Max) @ Id 2V @ 250µA 3V @ 250µA 2V @ 250µA 5.5V @ 250µA 1.2V @ 250µA 5.5V @ 250µA 5.5V @ 250µA 5.5V @ 250µA 5.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 56 nC @ 5 V 42 nC @ 4.5 V 35 nC @ 4.5 V 15 nC @ 10 V 130 nC @ 4.5 V 39 nC @ 10 V 41 nC @ 10 V 50 nC @ 10 V 38 nC @ 10 V
Vgs (Max) ±12V ±20V ±12V ±30V ±12V ±30V ±30V ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 3480 pF @ 25 V 3100 pF @ 10 V 2480 pF @ 10 V 330 pF @ 25 V 7980 pF @ 15 V 940 pF @ 25 V 990 pF @ 25 V 930 pF @ 25 V 930 pF @ 25 V
FET Feature - - - - - - - - -
Power Dissipation (Max) 2.5W (Ta) 2.5W (Ta) 2.5W (Ta) 2.5W (Ta) 2.5W (Ta) 2.5W (Ta) 2.5W (Ta) 2.5W (Ta) 2.5W (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package 8-SO 8-SO 8-SO 8-SO 8-SO 8-SO 8-SO 8-SO 8-SO
Package / Case 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width)

Related Product By Categories

TN2124K1-G
TN2124K1-G
Microchip Technology
MOSFET N-CH 240V 134MA TO236AB
FDD6692
FDD6692
Fairchild Semiconductor
N-CHANNEL POWER MOSFET
HUF75842S3ST
HUF75842S3ST
Fairchild Semiconductor
MOSFET N-CH 150V 43A D2PAK
FQP4N90
FQP4N90
Fairchild Semiconductor
MOSFET N-CH 900V 4.2A TO220-3
TSM085P03CS RLG
TSM085P03CS RLG
Taiwan Semiconductor Corporation
MOSFET P-CHANNEL 30V 34A 8SOP
DMN63D8LW-13
DMN63D8LW-13
Diodes Incorporated
MOSFET N-CH 30V 380MA SOT323
IRF9510SPBF
IRF9510SPBF
Vishay Siliconix
MOSFET P-CH 100V 4A D2PAK
NVTFS008N04CTAG
NVTFS008N04CTAG
onsemi
MOSFET N-CH 40V 14A/48A 8WDFN
BSP297L6327HTSA1
BSP297L6327HTSA1
Infineon Technologies
MOSFET N-CH 200V 660MA SOT223-4
IPP080N03L G
IPP080N03L G
Infineon Technologies
MOSFET N-CH 30V 50A TO220-3
IXFN100N10S1
IXFN100N10S1
IXYS
MOSFET N-CH 100V 100A SOT-227B
AOY526
AOY526
Alpha & Omega Semiconductor Inc.
MOSFET N-CH 30V 18A/50A TO251B

Related Product By Brand

BAS16WE6327HTSA1
BAS16WE6327HTSA1
Infineon Technologies
DIODE GEN PURP 80V 250MA SOT323
IRFB4227PBF
IRFB4227PBF
Infineon Technologies
MOSFET N-CH 200V 65A TO220AB
IRLR2908TRLPBF-INF
IRLR2908TRLPBF-INF
Infineon Technologies
IRLR2908 - HEXFET POWER MOSFET
IKP20N60T
IKP20N60T
Infineon Technologies
IKP20N60 - DISCRETE IGBT WITH AN
TLV49644TAXBXA1
TLV49644TAXBXA1
Infineon Technologies
MAGNETIC SWITCH TO92S-3-1
TLV4961-3TB
TLV4961-3TB
Infineon Technologies
MAGNETIC SWITCH LATCH TO92S
CY22801KSXC-021T
CY22801KSXC-021T
Infineon Technologies
IC CLOCK GENERATOR
CY9AF144NAPMC-G-JNE2
CY9AF144NAPMC-G-JNE2
Infineon Technologies
IC MCU 32BIT 288KB FLASH 100LQFP
CY7B9234-270JXC
CY7B9234-270JXC
Infineon Technologies
IC DRIVER 28PLCC
CY7C2270KV18-550BZXC
CY7C2270KV18-550BZXC
Infineon Technologies
NO WARRANTY
CY62168G18-55BVXI
CY62168G18-55BVXI
Infineon Technologies
IC SRAM 16MBIT PARALLEL 48VFBGA
CYBLE-202013-11
CYBLE-202013-11
Infineon Technologies
RX TXRX MOD BT 4.2 TRC ANT SMD