IRF7452
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Infineon Technologies IRF7452

Manufacturer No:
IRF7452
Manufacturer:
Infineon Technologies
Package:
Tube
Datasheet:
IRF7452 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 100V 4.5A 8SO
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:4.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:60mOhm @ 2.7A, 10V
Vgs(th) (Max) @ Id:5.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:50 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:930 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):2.5W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-SO
Package / Case:8-SOIC (0.154", 3.90mm Width)
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Similar Products

Part Number IRF7452 IRF7455   IRF7457   IRF7459   IRF7453   IRF7492   IRF7450   IRF7451  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 30 V 20 V 20 V 250 V 200 V 200 V 150 V
Current - Continuous Drain (Id) @ 25°C 4.5A (Ta) 15A (Ta) 15A (Ta) 12A (Ta) 2.2A (Ta) 3.7A (Ta) 2.5A (Ta) 3.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V 2.8V, 10V 4.5V, 10V 2.8V, 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 60mOhm @ 2.7A, 10V 7.5mOhm @ 15A, 10V 7mOhm @ 15A, 10V 9mOhm @ 12A, 10V 230mOhm @ 1.3A, 10V 79mOhm @ 2.2A, 10V 170mOhm @ 1.5A, 10V 90mOhm @ 2.2A, 10V
Vgs(th) (Max) @ Id 5.5V @ 250µA 2V @ 250µA 3V @ 250µA 2V @ 250µA 5.5V @ 250µA 2.5V @ 250µA 5.5V @ 250µA 5.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 50 nC @ 10 V 56 nC @ 5 V 42 nC @ 4.5 V 35 nC @ 4.5 V 38 nC @ 10 V 59 nC @ 10 V 39 nC @ 10 V 41 nC @ 10 V
Vgs (Max) ±30V ±12V ±20V ±12V ±30V ±20V ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 930 pF @ 25 V 3480 pF @ 25 V 3100 pF @ 10 V 2480 pF @ 10 V 930 pF @ 25 V 1820 pF @ 25 V 940 pF @ 25 V 990 pF @ 25 V
FET Feature - - - - - - - -
Power Dissipation (Max) 2.5W (Ta) 2.5W (Ta) 2.5W (Ta) 2.5W (Ta) 2.5W (Ta) 2.5W (Ta) 2.5W (Ta) 2.5W (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package 8-SO 8-SO 8-SO 8-SO 8-SO 8-SO 8-SO 8-SO
Package / Case 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width)

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