IRF7451TR
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Infineon Technologies IRF7451TR

Manufacturer No:
IRF7451TR
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Datasheet:
IRF7451TR Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 150V 3.6A 8SO
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):150 V
Current - Continuous Drain (Id) @ 25°C:3.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:90mOhm @ 2.2A, 10V
Vgs(th) (Max) @ Id:5.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:41 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:990 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):2.5W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-SO
Package / Case:8-SOIC (0.154", 3.90mm Width)
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Similar Products

Part Number IRF7451TR IRF7452TR   IRF7457TR   IRF7458TR   IRF7459TR   IRF7453TR   IRF7471TR   IRF7450TR  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 150 V 100 V 20 V 30 V 20 V 250 V 40 V 200 V
Current - Continuous Drain (Id) @ 25°C 3.6A (Ta) 4.5A (Ta) 15A (Ta) 14A (Ta) 12A (Ta) 2.2A (Ta) 10A (Ta) 2.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 4.5V, 10V 10V, 16V 2.8V, 10V 10V 4.5V, 10V 10V
Rds On (Max) @ Id, Vgs 90mOhm @ 2.2A, 10V 60mOhm @ 2.7A, 10V 7mOhm @ 15A, 10V 8mOhm @ 14A, 16V 9mOhm @ 12A, 10V 230mOhm @ 1.3A, 10V 13mOhm @ 10A, 10V 170mOhm @ 1.5A, 10V
Vgs(th) (Max) @ Id 5.5V @ 250µA 5.5V @ 250µA 3V @ 250µA 4V @ 250µA 2V @ 250µA 5.5V @ 250µA 3V @ 250µA 5.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 41 nC @ 10 V 50 nC @ 10 V 42 nC @ 4.5 V 59 nC @ 10 V 35 nC @ 4.5 V 38 nC @ 10 V 32 nC @ 4.5 V 39 nC @ 10 V
Vgs (Max) ±30V ±30V ±20V ±30V ±12V ±30V ±20V ±30V
Input Capacitance (Ciss) (Max) @ Vds 990 pF @ 25 V 930 pF @ 25 V 3100 pF @ 10 V 2410 pF @ 15 V 2480 pF @ 10 V 930 pF @ 25 V 2820 pF @ 20 V 940 pF @ 25 V
FET Feature - - - - - - - -
Power Dissipation (Max) 2.5W (Ta) 2.5W (Ta) 2.5W (Ta) 2.5W (Ta) 2.5W (Ta) 2.5W (Ta) 2.5W (Ta) 2.5W (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package 8-SO 8-SO 8-SO 8-SO 8-SO 8-SO 8-SO 8-SO
Package / Case 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width)

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