IRF7420TR
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Infineon Technologies IRF7420TR

Manufacturer No:
IRF7420TR
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Datasheet:
IRF7420TR Datasheet
ECAD Model:
-
Description:
MOSFET P-CH 12V 11.5A 8SO
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):12 V
Current - Continuous Drain (Id) @ 25°C:11.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On):1.8V, 4.5V
Rds On (Max) @ Id, Vgs:14mOhm @ 11.5A, 4.5V
Vgs(th) (Max) @ Id:900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs:38 nC @ 4.5 V
Vgs (Max):±8V
Input Capacitance (Ciss) (Max) @ Vds:3529 pF @ 10 V
FET Feature:- 
Power Dissipation (Max):2.5W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-SO
Package / Case:8-SOIC (0.154", 3.90mm Width)
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Similar Products

Part Number IRF7420TR IRF7460TR   IRF7423TR   IRF7424TR   IRF7425TR   IRF7426TR   IRF7450TR   IRF7470TR  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete
FET Type P-Channel N-Channel N-Channel P-Channel P-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 12 V 20 V 30 V 30 V 20 V 20 V 200 V 40 V
Current - Continuous Drain (Id) @ 25°C 11.5A (Tc) 12A (Ta) 11.5A (Ta) 11A (Tc) 15A (Ta) 11.5A (Ta) 2.5A (Ta) 10A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V 4.5V, 10V - 4.5V, 10V 2.5V, 4.5V - 10V 2.8V, 10V
Rds On (Max) @ Id, Vgs 14mOhm @ 11.5A, 4.5V 10mOhm @ 12A, 10V - 13.5mOhm @ 11A, 10V 8.2mOhm @ 15A, 4.5V - 170mOhm @ 1.5A, 10V 13mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 900mV @ 250µA 3V @ 250µA - 2.5V @ 250µA 1.2V @ 250µA - 5.5V @ 250µA 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 38 nC @ 4.5 V 19 nC @ 4.5 V - 110 nC @ 10 V 130 nC @ 4.5 V - 39 nC @ 10 V 44 nC @ 4.5 V
Vgs (Max) ±8V ±20V - ±20V ±12V - ±30V ±12V
Input Capacitance (Ciss) (Max) @ Vds 3529 pF @ 10 V 2050 pF @ 10 V - 4030 pF @ 25 V 7980 pF @ 15 V - 940 pF @ 25 V 3430 pF @ 20 V
FET Feature - - - - - - - -
Power Dissipation (Max) 2.5W (Ta) 2.5W (Ta) - 2.5W (Ta) 2.5W (Ta) - 2.5W (Ta) 2.5W (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) - -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) - -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package 8-SO 8-SO 8-SO 8-SO 8-SO 8-SO 8-SO 8-SO
Package / Case 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width)

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