IRF7420PBF
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Infineon Technologies IRF7420PBF

Manufacturer No:
IRF7420PBF
Manufacturer:
Infineon Technologies
Package:
Tube
Datasheet:
IRF7420PBF Datasheet
ECAD Model:
-
Description:
MOSFET P-CH 12V 11.5A 8SO
Delivery:
Payment:
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Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):12 V
Current - Continuous Drain (Id) @ 25°C:11.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On):1.8V, 4.5V
Rds On (Max) @ Id, Vgs:14mOhm @ 11.5A, 4.5V
Vgs(th) (Max) @ Id:900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs:38 nC @ 4.5 V
Vgs (Max):±8V
Input Capacitance (Ciss) (Max) @ Vds:3529 pF @ 10 V
FET Feature:- 
Power Dissipation (Max):2.5W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-SO
Package / Case:8-SOIC (0.154", 3.90mm Width)
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Similar Products

Part Number IRF7420PBF IRF7424PBF   IRF7450PBF   IRF7460PBF   IRF7470PBF   IRF7425PBF   IRF740PBF   IRF7410PBF  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Vishay Siliconix Infineon Technologies
Product Status Discontinued at Digi-Key Discontinued at Digi-Key Discontinued at Digi-Key Obsolete Discontinued at Digi-Key Discontinued at Digi-Key Active Discontinued at Digi-Key
FET Type P-Channel P-Channel N-Channel N-Channel N-Channel P-Channel N-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 12 V 30 V 200 V 20 V 40 V 20 V 400 V 12 V
Current - Continuous Drain (Id) @ 25°C 11.5A (Tc) 11A (Ta) 2.5A (Ta) 12A (Ta) 10A (Ta) 15A (Ta) 10A (Tc) 16A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V 4.5V, 10V 10V 4.5V, 10V 2.8V, 10V 2.5V, 4.5V 10V 1.8V, 4.5V
Rds On (Max) @ Id, Vgs 14mOhm @ 11.5A, 4.5V 13.5mOhm @ 11A, 10V 170mOhm @ 1.5A, 10V 10mOhm @ 12A, 10V 13mOhm @ 10A, 10V 8.2mOhm @ 15A, 4.5V 550mOhm @ 6A, 10V 7mOhm @ 16A, 4.5V
Vgs(th) (Max) @ Id 900mV @ 250µA 2.5V @ 250µA 5.5V @ 250µA 3V @ 250µA 2V @ 250µA 1.2V @ 250µA 4V @ 250µA 900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs 38 nC @ 4.5 V 110 nC @ 10 V 39 nC @ 10 V 19 nC @ 4.5 V 44 nC @ 4.5 V 130 nC @ 4.5 V 63 nC @ 10 V 91 nC @ 4.5 V
Vgs (Max) ±8V ±20V ±30V ±20V ±12V ±12V ±20V ±8V
Input Capacitance (Ciss) (Max) @ Vds 3529 pF @ 10 V 4030 pF @ 25 V 940 pF @ 25 V 2050 pF @ 10 V 3430 pF @ 20 V 7980 pF @ 15 V 1400 pF @ 25 V 8676 pF @ 10 V
FET Feature - - - - - - - -
Power Dissipation (Max) 2.5W (Ta) 2.5W (Ta) 2.5W (Ta) 2.5W (Ta) 2.5W (Ta) 2.5W (Ta) 125W (Tc) 2.5W (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Through Hole Surface Mount
Supplier Device Package 8-SO 8-SO 8-SO 8-SO 8-SO 8-SO TO-220AB 8-SOIC
Package / Case 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) TO-220-3 8-SOIC (0.154", 3.90mm Width)

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