IRF7413PBF
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Infineon Technologies IRF7413PBF

Manufacturer No:
IRF7413PBF
Manufacturer:
Infineon Technologies
Package:
Tube
Datasheet:
IRF7413PBF Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 30V 13A 8SO
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:13A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:11mOhm @ 7.3A, 10V
Vgs(th) (Max) @ Id:3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:79 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1800 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):2.5W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-SO
Package / Case:8-SOIC (0.154", 3.90mm Width)
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Part Number IRF7413PBF IRF7416PBF   IRF7413ZPBF   IRF7433PBF   IRF7453PBF   IRF7463PBF   IRF7403PBF   IRF7410PBF  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Discontinued at Digi-Key Discontinued at Digi-Key Discontinued at Digi-Key Obsolete Obsolete Discontinued at Digi-Key Discontinued at Digi-Key Discontinued at Digi-Key
FET Type N-Channel P-Channel N-Channel P-Channel N-Channel N-Channel N-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V 30 V 12 V 250 V 30 V 30 V 12 V
Current - Continuous Drain (Id) @ 25°C 13A (Ta) 10A (Ta) 13A (Ta) 8.9A (Ta) 2.2A (Ta) 14A (Ta) 8.5A (Ta) 16A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V 4.5V, 10V 1.8V, 4.5V 10V 2.7V, 10V 4.5V, 10V 1.8V, 4.5V
Rds On (Max) @ Id, Vgs 11mOhm @ 7.3A, 10V 20mOhm @ 5.6A, 10V 10mOhm @ 13A, 10V 24mOhm @ 8.7A, 4.5V 230mOhm @ 1.3A, 10V 8mOhm @ 14A, 10V 22mOhm @ 4A, 10V 7mOhm @ 16A, 4.5V
Vgs(th) (Max) @ Id 3V @ 250µA 1V @ 250µA 2.25V @ 25µA 900mV @ 250µA 5.5V @ 250µA 2V @ 250µA 1V @ 250µA 900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs 79 nC @ 10 V 92 nC @ 10 V 14 nC @ 4.5 V 20 nC @ 4.5 V 38 nC @ 10 V 51 nC @ 4.5 V 57 nC @ 10 V 91 nC @ 4.5 V
Vgs (Max) ±20V ±20V ±20V ±8V ±30V ±12V ±20V ±8V
Input Capacitance (Ciss) (Max) @ Vds 1800 pF @ 25 V 1700 pF @ 25 V 1210 pF @ 15 V 1877 pF @ 10 V 930 pF @ 25 V 3150 pF @ 15 V 1200 pF @ 25 V 8676 pF @ 10 V
FET Feature - - - - - - - -
Power Dissipation (Max) 2.5W (Ta) 2.5W (Ta) 2.5W (Ta) 2.5W (Ta) 2.5W (Ta) 2.5W (Ta) 2.5W (Ta) 2.5W (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package 8-SO 8-SO 8-SO 8-SO 8-SO 8-SO 8-SO 8-SOIC
Package / Case 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width)

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