IRF7410TRPBF
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Infineon Technologies IRF7410TRPBF

Manufacturer No:
IRF7410TRPBF
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Datasheet:
IRF7410TRPBF Datasheet
ECAD Model:
-
Description:
MOSFET P-CH 12V 16A 8SO
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):12 V
Current - Continuous Drain (Id) @ 25°C:16A (Ta)
Drive Voltage (Max Rds On, Min Rds On):1.8V, 4.5V
Rds On (Max) @ Id, Vgs:7mOhm @ 16A, 4.5V
Vgs(th) (Max) @ Id:900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs:91 nC @ 4.5 V
Vgs (Max):±8V
Input Capacitance (Ciss) (Max) @ Vds:8676 pF @ 10 V
FET Feature:- 
Power Dissipation (Max):2.5W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-SO
Package / Case:8-SOIC (0.154", 3.90mm Width)
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Similar Products

Part Number IRF7410TRPBF IRF7420TRPBF   IRF7416TRPBF   IRF7413TRPBF   IRF7460TRPBF   IRF7450TRPBF   IRF7410GTRPBF  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Active Last Time Buy Active Obsolete Obsolete Obsolete Active
FET Type P-Channel P-Channel P-Channel N-Channel N-Channel N-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 12 V 12 V 30 V 30 V 20 V 200 V 12 V
Current - Continuous Drain (Id) @ 25°C 16A (Ta) 11.5A (Tc) 10A (Ta) 13A (Ta) 12A (Ta) 2.5A (Ta) 16A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V 1.8V, 4.5V 4.5V, 10V 4.5V, 10V 4.5V, 10V 10V 1.8V, 4.5V
Rds On (Max) @ Id, Vgs 7mOhm @ 16A, 4.5V 14mOhm @ 11.5A, 4.5V 20mOhm @ 5.6A, 10V 11mOhm @ 7.3A, 10V 10mOhm @ 12A, 10V 170mOhm @ 1.5A, 10V 7mOhm @ 16A, 4.5V
Vgs(th) (Max) @ Id 900mV @ 250µA 900mV @ 250µA 1V @ 250µA 3V @ 250µA 3V @ 250µA 5.5V @ 250µA 900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs 91 nC @ 4.5 V 38 nC @ 4.5 V 92 nC @ 10 V 79 nC @ 10 V 19 nC @ 4.5 V 39 nC @ 10 V 91 nC @ 4.5 V
Vgs (Max) ±8V ±8V ±20V ±20V ±20V ±30V ±8V
Input Capacitance (Ciss) (Max) @ Vds 8676 pF @ 10 V 3529 pF @ 10 V 1700 pF @ 25 V 1800 pF @ 25 V 2050 pF @ 10 V 940 pF @ 25 V 8676 pF @ 10 V
FET Feature - - - - - - -
Power Dissipation (Max) 2.5W (Ta) 2.5W (Ta) 2.5W (Ta) 2.5W (Ta) 2.5W (Ta) 2.5W (Ta) 2.5W (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package 8-SO 8-SO 8-SO 8-SO 8-SO 8-SO 8-SO
Package / Case 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width)

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