IRF7410PBF
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Infineon Technologies IRF7410PBF

Manufacturer No:
IRF7410PBF
Manufacturer:
Infineon Technologies
Package:
Tube
Datasheet:
IRF7410PBF Datasheet
ECAD Model:
-
Description:
MOSFET P-CH 12V 16A 8SO
Delivery:
Payment:
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Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):12 V
Current - Continuous Drain (Id) @ 25°C:16A (Ta)
Drive Voltage (Max Rds On, Min Rds On):1.8V, 4.5V
Rds On (Max) @ Id, Vgs:7mOhm @ 16A, 4.5V
Vgs(th) (Max) @ Id:900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs:91 nC @ 4.5 V
Vgs (Max):±8V
Input Capacitance (Ciss) (Max) @ Vds:8676 pF @ 10 V
FET Feature:- 
Power Dissipation (Max):2.5W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-SOIC
Package / Case:8-SOIC (0.154", 3.90mm Width)
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Similar Products

Part Number IRF7410PBF IRF7416PBF   IRF7413PBF   IRF7420PBF   IRF7450PBF   IRF7460PBF   IRF740PBF  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Vishay Siliconix
Product Status Discontinued at Digi-Key Discontinued at Digi-Key Discontinued at Digi-Key Discontinued at Digi-Key Discontinued at Digi-Key Obsolete Active
FET Type P-Channel P-Channel N-Channel P-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 12 V 30 V 30 V 12 V 200 V 20 V 400 V
Current - Continuous Drain (Id) @ 25°C 16A (Ta) 10A (Ta) 13A (Ta) 11.5A (Tc) 2.5A (Ta) 12A (Ta) 10A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V 4.5V, 10V 4.5V, 10V 1.8V, 4.5V 10V 4.5V, 10V 10V
Rds On (Max) @ Id, Vgs 7mOhm @ 16A, 4.5V 20mOhm @ 5.6A, 10V 11mOhm @ 7.3A, 10V 14mOhm @ 11.5A, 4.5V 170mOhm @ 1.5A, 10V 10mOhm @ 12A, 10V 550mOhm @ 6A, 10V
Vgs(th) (Max) @ Id 900mV @ 250µA 1V @ 250µA 3V @ 250µA 900mV @ 250µA 5.5V @ 250µA 3V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 91 nC @ 4.5 V 92 nC @ 10 V 79 nC @ 10 V 38 nC @ 4.5 V 39 nC @ 10 V 19 nC @ 4.5 V 63 nC @ 10 V
Vgs (Max) ±8V ±20V ±20V ±8V ±30V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 8676 pF @ 10 V 1700 pF @ 25 V 1800 pF @ 25 V 3529 pF @ 10 V 940 pF @ 25 V 2050 pF @ 10 V 1400 pF @ 25 V
FET Feature - - - - - - -
Power Dissipation (Max) 2.5W (Ta) 2.5W (Ta) 2.5W (Ta) 2.5W (Ta) 2.5W (Ta) 2.5W (Ta) 125W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Through Hole
Supplier Device Package 8-SOIC 8-SO 8-SO 8-SO 8-SO 8-SO TO-220AB
Package / Case 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) TO-220-3

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