IRF7403PBF
  • Share:

Infineon Technologies IRF7403PBF

Manufacturer No:
IRF7403PBF
Manufacturer:
Infineon Technologies
Package:
Tube
Datasheet:
IRF7403PBF Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 30V 8.5A 8SO
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:8.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:22mOhm @ 4A, 10V
Vgs(th) (Max) @ Id:1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:57 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1200 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):2.5W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-SO
Package / Case:8-SOIC (0.154", 3.90mm Width)
0 Remaining View Similar

In Stock

-
595

Please send RFQ , we will respond immediately.

Similar Products

Part Number IRF7403PBF IRF740APBF   IRF740BPBF   IRF740PBF   IRF740SPBF   IRF7404PBF   IRF7406PBF   IRF7413PBF   IRF7433PBF   IRF7401PBF   IRF7402PBF  
Manufacturer Infineon Technologies Vishay Siliconix Vishay Siliconix Vishay Siliconix Vishay Siliconix Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Discontinued at Digi-Key Active Active Active Active Discontinued at Digi-Key Discontinued at Digi-Key Discontinued at Digi-Key Obsolete Discontinued at Digi-Key Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel P-Channel P-Channel N-Channel P-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 400 V 400 V 400 V 400 V 20 V 30 V 30 V 12 V 20 V 20 V
Current - Continuous Drain (Id) @ 25°C 8.5A (Ta) 10A (Tc) 10A (Tc) 10A (Tc) 10A (Tc) 6.7A (Ta) 5.8A (Ta) 13A (Ta) 8.9A (Ta) 8.7A (Ta) 6.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 10V 10V 10V 10V 2.7V, 4.5V 4.5V, 10V 4.5V, 10V 1.8V, 4.5V 2.7V, 4.5V 2.7V, 4.5V
Rds On (Max) @ Id, Vgs 22mOhm @ 4A, 10V 550mOhm @ 6A, 10V 600mOhm @ 5A, 10V 550mOhm @ 6A, 10V 550mOhm @ 6A, 10V 40mOhm @ 3.2A, 4.5V 45mOhm @ 2.8A, 10V 11mOhm @ 7.3A, 10V 24mOhm @ 8.7A, 4.5V 22mOhm @ 4.1A, 4.5V 35mOhm @ 4.1A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250µA 4V @ 250µA 5V @ 250µA 4V @ 250µA 4V @ 250µA 700mV @ 250µA (Min) 1V @ 250µA 3V @ 250µA 900mV @ 250µA 700mV @ 250µA (Min) 700mV @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs 57 nC @ 10 V 36 nC @ 10 V 30 nC @ 10 V 63 nC @ 10 V 63 nC @ 10 V 50 nC @ 4.5 V 59 nC @ 10 V 79 nC @ 10 V 20 nC @ 4.5 V 48 nC @ 4.5 V 22 nC @ 4.5 V
Vgs (Max) ±20V ±30V ±30V ±20V ±20V ±12V ±20V ±20V ±8V ±12V ±12V
Input Capacitance (Ciss) (Max) @ Vds 1200 pF @ 25 V 1030 pF @ 25 V 526 pF @ 100 V 1400 pF @ 25 V 1400 pF @ 25 V 1500 pF @ 15 V 1100 pF @ 25 V 1800 pF @ 25 V 1877 pF @ 10 V 1600 pF @ 15 V 650 pF @ 15 V
FET Feature - - - - - - - - - - -
Power Dissipation (Max) 2.5W (Ta) 125W (Tc) 147W (Tc) 125W (Tc) 3.1W (Ta), 125W (Tc) 2.5W (Ta) 2.5W (Ta) 2.5W (Ta) 2.5W (Ta) 2.5W (Ta) 2.5W (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Through Hole Through Hole Through Hole Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package 8-SO TO-220AB TO-220AB TO-220AB D²PAK (TO-263) 8-SO 8-SO 8-SO 8-SO 8-SO 8-SO
Package / Case 8-SOIC (0.154", 3.90mm Width) TO-220-3 TO-220-3 TO-220-3 TO-263-3, D²Pak (2 Leads + Tab), TO-263AB 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width)

Related Product By Categories

TSM13ND50CI
TSM13ND50CI
Taiwan Semiconductor Corporation
MOSFET N-CH 500V 13A ITO220
HUFA75321D3ST
HUFA75321D3ST
Fairchild Semiconductor
N-CHANNEL ULTRAFET 55V, 20A, 36
BUK7510-100B,127
BUK7510-100B,127
NXP USA Inc.
PFET, 75A I(D), 100V, 0.01OHM, 1
SISH410DN-T1-GE3
SISH410DN-T1-GE3
Vishay Siliconix
MOSFET N-CH 20V 22A/35A PPAK
NTLUS3A40PZTAG
NTLUS3A40PZTAG
onsemi
MOSFET P-CH 20V 4A 6UDFN
BUK7Y98-80EX
BUK7Y98-80EX
Nexperia USA Inc.
MOSFET N-CH 80V 12.3A LFPAK56
IRF614STRR
IRF614STRR
Vishay Siliconix
MOSFET N-CH 250V 2.7A D2PAK
STP50NE10
STP50NE10
STMicroelectronics
MOSFET N-CH 100V 50A TO220AB
STP15NM60N
STP15NM60N
STMicroelectronics
MOSFET N-CH 600V 14A TO220AB
IPI22N03S4L15AKSA1
IPI22N03S4L15AKSA1
Infineon Technologies
MOSFET N-CH 30V 22A TO262-3
IPP120N04S401AKSA1
IPP120N04S401AKSA1
Infineon Technologies
MOSFET N-CH 40V 120A TO220-3-1
IXFY4N60P3
IXFY4N60P3
IXYS
MOSFET N-CH 600V 4A TO252

Related Product By Brand

IPW60R017C7XKSA1
IPW60R017C7XKSA1
Infineon Technologies
HIGH POWER_NEW
XE164G24F66LACFXUMA1
XE164G24F66LACFXUMA1
Infineon Technologies
IC MCU 16BIT 192KB FLASH 100LQFP
PEB20321H-V22
PEB20321H-V22
Infineon Technologies
IC TELECOM INTERFACE 160-MQFP
IR2170
IR2170
Infineon Technologies
IC CURRENT SENSE 600V 1MA 8-DIP
TLF35584QVVS1XUMA1
TLF35584QVVS1XUMA1
Infineon Technologies
IC REG AUTO APPL 1OUT VQFN-48-31
TLE4999I3XALA1
TLE4999I3XALA1
Infineon Technologies
POSITION&CURRENT SENSORS
CY9AF155MBPMC-G-JNE2
CY9AF155MBPMC-G-JNE2
Infineon Technologies
IC MCU 32BIT 416KB FLASH 80LQFP
MB90022PF-GS-434
MB90022PF-GS-434
Infineon Technologies
IC MCU 16BIT 100QFP
CY88386PMC-GS-BNDE1
CY88386PMC-GS-BNDE1
Infineon Technologies
IC MICROCOMPUTER 4BIT 80LQFP
S25FL128LDPBHI020
S25FL128LDPBHI020
Infineon Technologies
IC FLASH 128MBIT SPI/QUAD 24BGA
CY7C1380D-167AXCT
CY7C1380D-167AXCT
Infineon Technologies
IC SRAM 18MBIT PARALLEL 100TQFP
S25FL129P0XMFI011
S25FL129P0XMFI011
Infineon Technologies
IC FLASH 128MBIT SPI/QUAD 16SOIC