IRF7403PBF
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Infineon Technologies IRF7403PBF

Manufacturer No:
IRF7403PBF
Manufacturer:
Infineon Technologies
Package:
Tube
Datasheet:
IRF7403PBF Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 30V 8.5A 8SO
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:8.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:22mOhm @ 4A, 10V
Vgs(th) (Max) @ Id:1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:57 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1200 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):2.5W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-SO
Package / Case:8-SOIC (0.154", 3.90mm Width)
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Part Number IRF7403PBF IRF740APBF   IRF740BPBF   IRF740PBF   IRF740SPBF   IRF7404PBF   IRF7406PBF   IRF7413PBF   IRF7433PBF   IRF7401PBF   IRF7402PBF  
Manufacturer Infineon Technologies Vishay Siliconix Vishay Siliconix Vishay Siliconix Vishay Siliconix Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Discontinued at Digi-Key Active Active Active Active Discontinued at Digi-Key Discontinued at Digi-Key Discontinued at Digi-Key Obsolete Discontinued at Digi-Key Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel P-Channel P-Channel N-Channel P-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 400 V 400 V 400 V 400 V 20 V 30 V 30 V 12 V 20 V 20 V
Current - Continuous Drain (Id) @ 25°C 8.5A (Ta) 10A (Tc) 10A (Tc) 10A (Tc) 10A (Tc) 6.7A (Ta) 5.8A (Ta) 13A (Ta) 8.9A (Ta) 8.7A (Ta) 6.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 10V 10V 10V 10V 2.7V, 4.5V 4.5V, 10V 4.5V, 10V 1.8V, 4.5V 2.7V, 4.5V 2.7V, 4.5V
Rds On (Max) @ Id, Vgs 22mOhm @ 4A, 10V 550mOhm @ 6A, 10V 600mOhm @ 5A, 10V 550mOhm @ 6A, 10V 550mOhm @ 6A, 10V 40mOhm @ 3.2A, 4.5V 45mOhm @ 2.8A, 10V 11mOhm @ 7.3A, 10V 24mOhm @ 8.7A, 4.5V 22mOhm @ 4.1A, 4.5V 35mOhm @ 4.1A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250µA 4V @ 250µA 5V @ 250µA 4V @ 250µA 4V @ 250µA 700mV @ 250µA (Min) 1V @ 250µA 3V @ 250µA 900mV @ 250µA 700mV @ 250µA (Min) 700mV @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs 57 nC @ 10 V 36 nC @ 10 V 30 nC @ 10 V 63 nC @ 10 V 63 nC @ 10 V 50 nC @ 4.5 V 59 nC @ 10 V 79 nC @ 10 V 20 nC @ 4.5 V 48 nC @ 4.5 V 22 nC @ 4.5 V
Vgs (Max) ±20V ±30V ±30V ±20V ±20V ±12V ±20V ±20V ±8V ±12V ±12V
Input Capacitance (Ciss) (Max) @ Vds 1200 pF @ 25 V 1030 pF @ 25 V 526 pF @ 100 V 1400 pF @ 25 V 1400 pF @ 25 V 1500 pF @ 15 V 1100 pF @ 25 V 1800 pF @ 25 V 1877 pF @ 10 V 1600 pF @ 15 V 650 pF @ 15 V
FET Feature - - - - - - - - - - -
Power Dissipation (Max) 2.5W (Ta) 125W (Tc) 147W (Tc) 125W (Tc) 3.1W (Ta), 125W (Tc) 2.5W (Ta) 2.5W (Ta) 2.5W (Ta) 2.5W (Ta) 2.5W (Ta) 2.5W (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Through Hole Through Hole Through Hole Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package 8-SO TO-220AB TO-220AB TO-220AB D²PAK (TO-263) 8-SO 8-SO 8-SO 8-SO 8-SO 8-SO
Package / Case 8-SOIC (0.154", 3.90mm Width) TO-220-3 TO-220-3 TO-220-3 TO-263-3, D²Pak (2 Leads + Tab), TO-263AB 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width)

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