IRF7402PBF
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Infineon Technologies IRF7402PBF

Manufacturer No:
IRF7402PBF
Manufacturer:
Infineon Technologies
Package:
Tube
Datasheet:
IRF7402PBF Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 20V 6.8A 8SO
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:6.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On):2.7V, 4.5V
Rds On (Max) @ Id, Vgs:35mOhm @ 4.1A, 4.5V
Vgs(th) (Max) @ Id:700mV @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs:22 nC @ 4.5 V
Vgs (Max):±12V
Input Capacitance (Ciss) (Max) @ Vds:650 pF @ 15 V
FET Feature:- 
Power Dissipation (Max):2.5W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-SO
Package / Case:8-SOIC (0.154", 3.90mm Width)
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Similar Products

Part Number IRF7402PBF IRF740APBF   IRF740BPBF   IRF740PBF   IRF740SPBF   IRF7403PBF   IRF7404PBF   IRF7406PBF   IRF7401PBF  
Manufacturer Infineon Technologies Vishay Siliconix Vishay Siliconix Vishay Siliconix Vishay Siliconix Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Obsolete Active Active Active Active Discontinued at Digi-Key Discontinued at Digi-Key Discontinued at Digi-Key Discontinued at Digi-Key
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel P-Channel P-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V 400 V 400 V 400 V 400 V 30 V 20 V 30 V 20 V
Current - Continuous Drain (Id) @ 25°C 6.8A (Ta) 10A (Tc) 10A (Tc) 10A (Tc) 10A (Tc) 8.5A (Ta) 6.7A (Ta) 5.8A (Ta) 8.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.7V, 4.5V 10V 10V 10V 10V 4.5V, 10V 2.7V, 4.5V 4.5V, 10V 2.7V, 4.5V
Rds On (Max) @ Id, Vgs 35mOhm @ 4.1A, 4.5V 550mOhm @ 6A, 10V 600mOhm @ 5A, 10V 550mOhm @ 6A, 10V 550mOhm @ 6A, 10V 22mOhm @ 4A, 10V 40mOhm @ 3.2A, 4.5V 45mOhm @ 2.8A, 10V 22mOhm @ 4.1A, 4.5V
Vgs(th) (Max) @ Id 700mV @ 250µA (Min) 4V @ 250µA 5V @ 250µA 4V @ 250µA 4V @ 250µA 1V @ 250µA 700mV @ 250µA (Min) 1V @ 250µA 700mV @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs 22 nC @ 4.5 V 36 nC @ 10 V 30 nC @ 10 V 63 nC @ 10 V 63 nC @ 10 V 57 nC @ 10 V 50 nC @ 4.5 V 59 nC @ 10 V 48 nC @ 4.5 V
Vgs (Max) ±12V ±30V ±30V ±20V ±20V ±20V ±12V ±20V ±12V
Input Capacitance (Ciss) (Max) @ Vds 650 pF @ 15 V 1030 pF @ 25 V 526 pF @ 100 V 1400 pF @ 25 V 1400 pF @ 25 V 1200 pF @ 25 V 1500 pF @ 15 V 1100 pF @ 25 V 1600 pF @ 15 V
FET Feature - - - - - - - - -
Power Dissipation (Max) 2.5W (Ta) 125W (Tc) 147W (Tc) 125W (Tc) 3.1W (Ta), 125W (Tc) 2.5W (Ta) 2.5W (Ta) 2.5W (Ta) 2.5W (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Through Hole Through Hole Through Hole Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package 8-SO TO-220AB TO-220AB TO-220AB D²PAK (TO-263) 8-SO 8-SO 8-SO 8-SO
Package / Case 8-SOIC (0.154", 3.90mm Width) TO-220-3 TO-220-3 TO-220-3 TO-263-3, D²Pak (2 Leads + Tab), TO-263AB 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width)

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