IRF7338PBF
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Infineon Technologies IRF7338PBF

Manufacturer No:
IRF7338PBF
Manufacturer:
Infineon Technologies
Package:
Tube
Datasheet:
IRF7338PBF Datasheet
ECAD Model:
-
Description:
MOSFET N/P-CH 12V 6.3A/3A 8-SOIC
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N and P-Channel
FET Feature:Logic Level Gate
Drain to Source Voltage (Vdss):12V
Current - Continuous Drain (Id) @ 25°C:6.3A, 3A
Rds On (Max) @ Id, Vgs:34mOhm @ 6A, 4.5V
Vgs(th) (Max) @ Id:1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:8.6nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds:640pF @ 9V
Power - Max:2W
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:8-SOIC (0.154", 3.90mm Width)
Supplier Device Package:8-SO
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Similar Products

Part Number IRF7338PBF IRF7328PBF   IRF7331PBF  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Obsolete Discontinued at Digi-Key Discontinued at Digi-Key
FET Type N and P-Channel 2 P-Channel (Dual) 2 N-Channel (Dual)
FET Feature Logic Level Gate Logic Level Gate Logic Level Gate
Drain to Source Voltage (Vdss) 12V 30V 20V
Current - Continuous Drain (Id) @ 25°C 6.3A, 3A 8A 7A
Rds On (Max) @ Id, Vgs 34mOhm @ 6A, 4.5V 21mOhm @ 8A, 10V 30mOhm @ 7A, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 250µA 2.5V @ 250µA 1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 8.6nC @ 4.5V 78nC @ 10V 20nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds 640pF @ 9V 2675pF @ 25V 1340pF @ 16V
Power - Max 2W 2W 2W
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Package / Case 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package 8-SO 8-SO 8-SO

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