IRF7201PBF
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Infineon Technologies IRF7201PBF

Manufacturer No:
IRF7201PBF
Manufacturer:
Infineon Technologies
Package:
Tube
Datasheet:
IRF7201PBF Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 30V 7.3A 8SO
Delivery:
Payment:
iso14001
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iso9001
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:7.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:30mOhm @ 7.3A, 10V
Vgs(th) (Max) @ Id:1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:28 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:550 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):2.5W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-SO
Package / Case:8-SOIC (0.154", 3.90mm Width)
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Similar Products

Part Number IRF7201PBF IRF720PBF   IRF720SPBF   IRF720LPBF   IRF7204PBF   IRF7205PBF   IRF7207PBF   IRF7241PBF   IRF7401PBF  
Manufacturer Infineon Technologies Vishay Siliconix Vishay Siliconix Vishay Siliconix Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Discontinued at Digi-Key Active Active Active Discontinued at Digi-Key Discontinued at Digi-Key Obsolete Discontinued at Digi-Key Discontinued at Digi-Key
FET Type N-Channel N-Channel N-Channel N-Channel P-Channel P-Channel P-Channel P-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 400 V 400 V 400 V 20 V 30 V 20 V 40 V 20 V
Current - Continuous Drain (Id) @ 25°C 7.3A (Tc) 3.3A (Tc) 3.3A (Tc) 3.3A (Tc) 5.3A (Ta) 4.6A (Ta) 5.4A (Tc) 6.2A (Ta) 8.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 10V 10V 10V 4.5V, 10V 4.5V, 10V 2.7V, 4.5V 4.5V, 10V 2.7V, 4.5V
Rds On (Max) @ Id, Vgs 30mOhm @ 7.3A, 10V 1.8Ohm @ 2A, 10V 1.8Ohm @ 2A, 10V 1.8Ohm @ 2A, 10V 60mOhm @ 5.3A, 10V 70mOhm @ 4.6A, 10V 60mOhm @ 5.4A, 4.5V 41mOhm @ 6.2A, 10V 22mOhm @ 4.1A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA 2.5V @ 250µA 3V @ 250µA 700mV @ 250µA (Min) 3V @ 250µA 700mV @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs 28 nC @ 10 V 20 nC @ 10 V 20 nC @ 10 V 20 nC @ 10 V 25 nC @ 10 V 40 nC @ 10 V 22 nC @ 4.5 V 80 nC @ 10 V 48 nC @ 4.5 V
Vgs (Max) ±20V ±20V ±20V ±20V ±12V ±20V ±12V ±20V ±12V
Input Capacitance (Ciss) (Max) @ Vds 550 pF @ 25 V 410 pF @ 25 V 410 pF @ 25 V 410 pF @ 25 V 860 pF @ 10 V 870 pF @ 10 V 780 pF @ 15 V 3220 pF @ 25 V 1600 pF @ 15 V
FET Feature - - - - - - - - -
Power Dissipation (Max) 2.5W (Tc) 50W (Tc) 3.1W (Ta), 50W (Tc) 3.1W (Ta), 50W (Tc) 2.5W (Tc) 2.5W (Tc) 2.5W (Tc) 2.5W (Ta) 2.5W (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Through Hole Surface Mount Through Hole Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package 8-SO TO-220AB D²PAK (TO-263) TO-262-3 8-SO 8-SO 8-SO 8-SO 8-SO
Package / Case 8-SOIC (0.154", 3.90mm Width) TO-220-3 TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-262-3 Long Leads, I²Pak, TO-262AA 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width)

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