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| Part Number | IRF6810STR1PBF | IRF6810STRPBF |
|---|---|---|
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Status | Obsolete | Obsolete |
| FET Type | N-Channel | N-Channel |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 25 V | 25 V |
| Current - Continuous Drain (Id) @ 25°C | 16A (Ta), 50A (Tc) | 16A (Ta), 50A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 5.2mOhm @ 16A, 10V | 5.2mOhm @ 16A, 10V |
| Vgs(th) (Max) @ Id | 2.1V @ 25µA | 2.1V @ 25µA |
| Gate Charge (Qg) (Max) @ Vgs | 11 nC @ 4.5 V | 11 nC @ 4.5 V |
| Vgs (Max) | ±16V | ±16V |
| Input Capacitance (Ciss) (Max) @ Vds | 1038 pF @ 13 V | 1038 pF @ 13 V |
| FET Feature | - | - |
| Power Dissipation (Max) | 2.1W (Ta), 20W (Tc) | 2.1W (Ta), 20W (Tc) |
| Operating Temperature | -40°C ~ 150°C (TJ) | -40°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount | Surface Mount |
| Supplier Device Package | DirectFET™ Isometric S1 | DirectFET™ Isometric S1 |
| Package / Case | DirectFET™ Isometric S1 | DirectFET™ Isometric S1 |
