IRF6798MTRPBF
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Infineon Technologies IRF6798MTRPBF

Manufacturer No:
IRF6798MTRPBF
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Datasheet:
IRF6798MTRPBF Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 25V 37A DIRECTFET
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):25 V
Current - Continuous Drain (Id) @ 25°C:37A (Ta), 197A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:1.3mOhm @ 37A, 10V
Vgs(th) (Max) @ Id:2.35V @ 150µA
Gate Charge (Qg) (Max) @ Vgs:75 nC @ 4.5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:6560 pF @ 13 V
FET Feature:Schottky Diode (Body)
Power Dissipation (Max):2.8W (Ta), 78W (Tc)
Operating Temperature:-40°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:DIRECTFET™ MX
Package / Case:DirectFET™ Isometric MX
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Part Number IRF6798MTRPBF IRF6898MTRPBF   IRF6728MTRPBF   IRF6794MTRPBF   IRF6795MTRPBF   IRF6797MTRPBF   IRF6798MTR1PBF  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Obsolete Active Obsolete Obsolete Active Active Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 25 V 25 V 30 V 25 V 25 V 25 V 25 V
Current - Continuous Drain (Id) @ 25°C 37A (Ta), 197A (Tc) 40A (Ta), 214A (Tc) 23A (Ta), 140A (Tc) 32A (Ta), 200A (Tc) 32A (Ta), 160A (Tc) 36A (Ta), 210A (Tc) 37A (Ta), 197A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V - 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 1.3mOhm @ 37A, 10V 1.1mOhm @ 40A, 10V 2.5mOhm @ 23A, 10V 1.7mOhm @ 32A, 10V 1.8mOhm @ 32A, 10V 1.4mOhm @ 38A, 10V 1.3mOhm @ 37A, 10V
Vgs(th) (Max) @ Id 2.35V @ 150µA 2.1V @ 100µA 2.35V @ 100µA 2.35V @ 100µA 2.35V @ 100µA 2.35V @ 150µA 2.35V @ 150µA
Gate Charge (Qg) (Max) @ Vgs 75 nC @ 4.5 V 68 nC @ 4.5 V 42 nC @ 4.5 V 47 nC @ 4.5 V 53 nC @ 4.5 V 68 nC @ 4.5 V 75 nC @ 4.5 V
Vgs (Max) ±20V ±16V ±20V ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 6560 pF @ 13 V 5630 pF @ 13 V 4110 pF @ 15 V 4420 pF @ 13 V 4280 pF @ 13 V 5790 pF @ 13 V 6560 pF @ 13 V
FET Feature Schottky Diode (Body) Schottky Diode (Body) - Schottky Diode (Body) - - Schottky Diode (Body)
Power Dissipation (Max) 2.8W (Ta), 78W (Tc) 2.8W (Ta), 78W (Tc) 2.1W (Ta), 75W (Tc) 2.8W (Ta), 100W (Tc) 2.8W (Ta), 75W (Tc) 2.8W (Ta), 89W (Tc) 2.8W (Ta), 78W (Tc)
Operating Temperature -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package DIRECTFET™ MX DirectFET™ Isometric MX DIRECTFET™ MX DIRECTFET™ MX DIRECTFET™ MX DIRECTFET™ MX DIRECTFET™ MX
Package / Case DirectFET™ Isometric MX DirectFET™ Isometric MX DirectFET™ Isometric MX DirectFET™ Isometric MX DirectFET™ Isometric MX DirectFET™ Isometric MX DirectFET™ Isometric MX

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