IRF6797MTR1PBF
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Infineon Technologies IRF6797MTR1PBF

Manufacturer No:
IRF6797MTR1PBF
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Datasheet:
IRF6797MTR1PBF Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 25V 36A DIRECTFET
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):25 V
Current - Continuous Drain (Id) @ 25°C:36A (Ta), 210A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:1.4mOhm @ 38A, 10V
Vgs(th) (Max) @ Id:2.35V @ 150µA
Gate Charge (Qg) (Max) @ Vgs:68 nC @ 4.5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:5790 pF @ 13 V
FET Feature:- 
Power Dissipation (Max):2.8W (Ta), 89W (Tc)
Operating Temperature:-40°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:DIRECTFET™ MX
Package / Case:DirectFET™ Isometric MX
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Similar Products

Part Number IRF6797MTR1PBF IRF6797MTRPBF   IRF6798MTR1PBF   IRF6717MTR1PBF   IRF6727MTR1PBF   IRF6794MTR1PBF   IRF6795MTR1PBF  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Obsolete Active Obsolete Obsolete Obsolete Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 25 V 25 V 25 V 25 V 30 V 25 V 25 V
Current - Continuous Drain (Id) @ 25°C 36A (Ta), 210A (Tc) 36A (Ta), 210A (Tc) 37A (Ta), 197A (Tc) 38A (Ta), 200A (Tc) 32A (Ta), 180A (Tc) 32A (Ta), 200A (Tc) 32A (Ta), 160A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 1.4mOhm @ 38A, 10V 1.4mOhm @ 38A, 10V 1.3mOhm @ 37A, 10V 1.25mOhm @ 38A, 10V 1.7mOhm @ 32A, 10V 1.7mOhm @ 32A, 10V 1.8mOhm @ 32A, 10V
Vgs(th) (Max) @ Id 2.35V @ 150µA 2.35V @ 150µA 2.35V @ 150µA 2.35V @ 150µA 2.35V @ 100µA 2.35V @ 100µA 2.35V @ 100µA
Gate Charge (Qg) (Max) @ Vgs 68 nC @ 4.5 V 68 nC @ 4.5 V 75 nC @ 4.5 V 69 nC @ 4.5 V 74 nC @ 4.5 V 47 nC @ 4.5 V 53 nC @ 4.5 V
Vgs (Max) ±20V ±20V ±20V ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 5790 pF @ 13 V 5790 pF @ 13 V 6560 pF @ 13 V 6750 pF @ 13 V 6190 pF @ 15 V 4420 pF @ 13 V 4280 pF @ 13 V
FET Feature - - Schottky Diode (Body) - - Schottky Diode (Body) -
Power Dissipation (Max) 2.8W (Ta), 89W (Tc) 2.8W (Ta), 89W (Tc) 2.8W (Ta), 78W (Tc) 2.8W (Ta), 96W (Tc) 2.8W (Ta), 89W (Tc) 2.8W (Ta), 100W (Tc) 2.8W (Ta), 75W (Tc)
Operating Temperature -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package DIRECTFET™ MX DIRECTFET™ MX DIRECTFET™ MX DIRECTFET™ MX DIRECTFET™ MX DIRECTFET™ MX DIRECTFET™ MX
Package / Case DirectFET™ Isometric MX DirectFET™ Isometric MX DirectFET™ Isometric MX DirectFET™ Isometric MX DirectFET™ Isometric MX DirectFET™ Isometric MX DirectFET™ Isometric MX

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