IRF6795MTRPBF
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Infineon Technologies IRF6795MTRPBF

Manufacturer No:
IRF6795MTRPBF
Manufacturer:
Infineon Technologies
Package:
Bulk
Datasheet:
IRF6795MTRPBF Datasheet
ECAD Model:
-
Description:
IRF6795 - 12V-300V N-CHANNEL POW
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):25 V
Current - Continuous Drain (Id) @ 25°C:32A (Ta), 160A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:1.8mOhm @ 32A, 10V
Vgs(th) (Max) @ Id:2.35V @ 100µA
Gate Charge (Qg) (Max) @ Vgs:53 nC @ 4.5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:4280 pF @ 13 V
FET Feature:- 
Power Dissipation (Max):2.8W (Ta), 75W (Tc)
Operating Temperature:-40°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:DIRECTFET™ MX
Package / Case:DirectFET™ Isometric MX
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Similar Products

Part Number IRF6795MTRPBF IRF6797MTRPBF   IRF6798MTRPBF   IRF6715MTRPBF   IRF6725MTRPBF   IRF6775MTRPBF   IRF6785MTRPBF   IRF6794MTRPBF   IRF6795MTR1PBF  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Active Active Obsolete Active Obsolete Active Active Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 25 V 25 V 25 V 25 V 30 V 150 V 200 V 25 V 25 V
Current - Continuous Drain (Id) @ 25°C 32A (Ta), 160A (Tc) 36A (Ta), 210A (Tc) 37A (Ta), 197A (Tc) 34A (Ta), 180A (Tc) 28A (Ta), 170A (Tc) 4.9A (Ta), 28A (Tc) 3.4A (Ta), 19A (Tc) 32A (Ta), 200A (Tc) 32A (Ta), 160A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V 10V 10V 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 1.8mOhm @ 32A, 10V 1.4mOhm @ 38A, 10V 1.3mOhm @ 37A, 10V 1.6mOhm @ 34A, 10V 2.2mOhm @ 28A, 10V 56mOhm @ 5.6A, 10V 100mOhm @ 4.2A, 10V 1.7mOhm @ 32A, 10V 1.8mOhm @ 32A, 10V
Vgs(th) (Max) @ Id 2.35V @ 100µA 2.35V @ 150µA 2.35V @ 150µA 2.4V @ 100µA 2.35V @ 100µA 5V @ 100µA 5V @ 100µA 2.35V @ 100µA 2.35V @ 100µA
Gate Charge (Qg) (Max) @ Vgs 53 nC @ 4.5 V 68 nC @ 4.5 V 75 nC @ 4.5 V 59 nC @ 4.5 V 54 nC @ 4.5 V 36 nC @ 10 V 36 nC @ 10 V 47 nC @ 4.5 V 53 nC @ 4.5 V
Vgs (Max) ±20V ±20V ±20V ±20V ±20V ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 4280 pF @ 13 V 5790 pF @ 13 V 6560 pF @ 13 V 5340 pF @ 13 V 4700 pF @ 15 V 1411 pF @ 25 V 1500 pF @ 25 V 4420 pF @ 13 V 4280 pF @ 13 V
FET Feature - - Schottky Diode (Body) - - - - Schottky Diode (Body) -
Power Dissipation (Max) 2.8W (Ta), 75W (Tc) 2.8W (Ta), 89W (Tc) 2.8W (Ta), 78W (Tc) 2.8W (Ta), 78W (Tc) 2.8W (Ta), 100W (Tc) 2.8W (Ta), 89W (Tc) 2.8W (Ta), 57W (Tc) 2.8W (Ta), 100W (Tc) 2.8W (Ta), 75W (Tc)
Operating Temperature -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package DIRECTFET™ MX DIRECTFET™ MX DIRECTFET™ MX DIRECTFET™ MX DIRECTFET™ MX DIRECTFET™ MZ DIRECTFET™ MZ DIRECTFET™ MX DIRECTFET™ MX
Package / Case DirectFET™ Isometric MX DirectFET™ Isometric MX DirectFET™ Isometric MX DirectFET™ Isometric MX DirectFET™ Isometric MX DirectFET™ Isometric MZ DirectFET™ Isometric MZ DirectFET™ Isometric MX DirectFET™ Isometric MX

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