IRF6717MTR1PBF
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Infineon Technologies IRF6717MTR1PBF

Manufacturer No:
IRF6717MTR1PBF
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Datasheet:
IRF6717MTR1PBF Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 25V 38A DIRECTFET
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):25 V
Current - Continuous Drain (Id) @ 25°C:38A (Ta), 200A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:1.25mOhm @ 38A, 10V
Vgs(th) (Max) @ Id:2.35V @ 150µA
Gate Charge (Qg) (Max) @ Vgs:69 nC @ 4.5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:6750 pF @ 13 V
FET Feature:- 
Power Dissipation (Max):2.8W (Ta), 96W (Tc)
Operating Temperature:-40°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:DIRECTFET™ MX
Package / Case:DirectFET™ Isometric MX
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Similar Products

Part Number IRF6717MTR1PBF IRF6717MTRPBF   IRF6727MTR1PBF   IRF6797MTR1PBF   IRF6714MTR1PBF   IRF6715MTR1PBF   IRF6716MTR1PBF  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Obsolete Active Obsolete Obsolete Obsolete Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 25 V 25 V 30 V 25 V 25 V 25 V 25 V
Current - Continuous Drain (Id) @ 25°C 38A (Ta), 200A (Tc) 38A (Ta), 200A (Tc) 32A (Ta), 180A (Tc) 36A (Ta), 210A (Tc) 29A (Ta), 166A (Tc) 34A (Ta), 180A (Tc) 39A (Ta), 180A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 1.25mOhm @ 38A, 10V 1.25mOhm @ 38A, 10V 1.7mOhm @ 32A, 10V 1.4mOhm @ 38A, 10V 2.1mOhm @ 29A, 10V 1.6mOhm @ 34A, 10V 1.6mOhm @ 40A, 10V
Vgs(th) (Max) @ Id 2.35V @ 150µA 2.35V @ 150µA 2.35V @ 100µA 2.35V @ 150µA 2.4V @ 100µA 2.4V @ 100µA 2.4V @ 100µA
Gate Charge (Qg) (Max) @ Vgs 69 nC @ 4.5 V 69 nC @ 4.5 V 74 nC @ 4.5 V 68 nC @ 4.5 V 44 nC @ 4.5 V 59 nC @ 4.5 V 59 nC @ 4.5 V
Vgs (Max) ±20V ±20V ±20V ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 6750 pF @ 13 V 6750 pF @ 13 V 6190 pF @ 15 V 5790 pF @ 13 V 3890 pF @ 13 V 5340 pF @ 13 V 5150 pF @ 13 V
FET Feature - - - - - - -
Power Dissipation (Max) 2.8W (Ta), 96W (Tc) 2.8W (Ta), 96W (Tc) 2.8W (Ta), 89W (Tc) 2.8W (Ta), 89W (Tc) 2.8W (Ta), 89W (Tc) 2.8W (Ta), 78W (Tc) 3.6W (Ta), 78W (Tc)
Operating Temperature -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package DIRECTFET™ MX DIRECTFET™ MX DIRECTFET™ MX DIRECTFET™ MX DIRECTFET™ MX DIRECTFET™ MX DIRECTFET™ MX
Package / Case DirectFET™ Isometric MX DirectFET™ Isometric MX DirectFET™ Isometric MX DirectFET™ Isometric MX DirectFET™ Isometric MX DirectFET™ Isometric MX DirectFET™ Isometric MX

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