IRF6717MTR1PBF
  • Share:

Infineon Technologies IRF6717MTR1PBF

Manufacturer No:
IRF6717MTR1PBF
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Datasheet:
IRF6717MTR1PBF Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 25V 38A DIRECTFET
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):25 V
Current - Continuous Drain (Id) @ 25°C:38A (Ta), 200A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:1.25mOhm @ 38A, 10V
Vgs(th) (Max) @ Id:2.35V @ 150µA
Gate Charge (Qg) (Max) @ Vgs:69 nC @ 4.5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:6750 pF @ 13 V
FET Feature:- 
Power Dissipation (Max):2.8W (Ta), 96W (Tc)
Operating Temperature:-40°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:DIRECTFET™ MX
Package / Case:DirectFET™ Isometric MX
0 Remaining View Similar

In Stock

-
418

Please send RFQ , we will respond immediately.

Similar Products

Part Number IRF6717MTR1PBF IRF6717MTRPBF   IRF6727MTR1PBF   IRF6797MTR1PBF   IRF6714MTR1PBF   IRF6715MTR1PBF   IRF6716MTR1PBF  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Obsolete Active Obsolete Obsolete Obsolete Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 25 V 25 V 30 V 25 V 25 V 25 V 25 V
Current - Continuous Drain (Id) @ 25°C 38A (Ta), 200A (Tc) 38A (Ta), 200A (Tc) 32A (Ta), 180A (Tc) 36A (Ta), 210A (Tc) 29A (Ta), 166A (Tc) 34A (Ta), 180A (Tc) 39A (Ta), 180A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 1.25mOhm @ 38A, 10V 1.25mOhm @ 38A, 10V 1.7mOhm @ 32A, 10V 1.4mOhm @ 38A, 10V 2.1mOhm @ 29A, 10V 1.6mOhm @ 34A, 10V 1.6mOhm @ 40A, 10V
Vgs(th) (Max) @ Id 2.35V @ 150µA 2.35V @ 150µA 2.35V @ 100µA 2.35V @ 150µA 2.4V @ 100µA 2.4V @ 100µA 2.4V @ 100µA
Gate Charge (Qg) (Max) @ Vgs 69 nC @ 4.5 V 69 nC @ 4.5 V 74 nC @ 4.5 V 68 nC @ 4.5 V 44 nC @ 4.5 V 59 nC @ 4.5 V 59 nC @ 4.5 V
Vgs (Max) ±20V ±20V ±20V ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 6750 pF @ 13 V 6750 pF @ 13 V 6190 pF @ 15 V 5790 pF @ 13 V 3890 pF @ 13 V 5340 pF @ 13 V 5150 pF @ 13 V
FET Feature - - - - - - -
Power Dissipation (Max) 2.8W (Ta), 96W (Tc) 2.8W (Ta), 96W (Tc) 2.8W (Ta), 89W (Tc) 2.8W (Ta), 89W (Tc) 2.8W (Ta), 89W (Tc) 2.8W (Ta), 78W (Tc) 3.6W (Ta), 78W (Tc)
Operating Temperature -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package DIRECTFET™ MX DIRECTFET™ MX DIRECTFET™ MX DIRECTFET™ MX DIRECTFET™ MX DIRECTFET™ MX DIRECTFET™ MX
Package / Case DirectFET™ Isometric MX DirectFET™ Isometric MX DirectFET™ Isometric MX DirectFET™ Isometric MX DirectFET™ Isometric MX DirectFET™ Isometric MX DirectFET™ Isometric MX

Related Product By Categories

FQI19N20TU
FQI19N20TU
Fairchild Semiconductor
MOSFET N-CH 200V 19.4A I2PAK
RJK0394DPA-00#J5A
RJK0394DPA-00#J5A
Renesas Electronics America Inc
MOSFET N-CH 30V 35A 8WPAK
FQT7N10LTF
FQT7N10LTF
onsemi
MOSFET N-CH 100V 1.7A SOT223-4
IPT60R045CFD7XTMA1
IPT60R045CFD7XTMA1
Infineon Technologies
MOSFET N-CH 600V 52A 8HSOF
DMP3010LK3Q-13
DMP3010LK3Q-13
Diodes Incorporated
MOSFET P-CH 30V 17A TO252
SI7629DN-T1-GE3
SI7629DN-T1-GE3
Vishay Siliconix
MOSFET P-CH 20V 35A PPAK1212-8
BSO130N03MSG
BSO130N03MSG
Infineon Technologies
SMALL SIGNAL N-CHANNEL MOSFET
DMPH6250S-7
DMPH6250S-7
Diodes Incorporated
MOSFET P-CH 60V 2.4A SOT23
AOTF7S65
AOTF7S65
Alpha & Omega Semiconductor Inc.
MOSFET N-CH 650V 7A TO220-3F
SIHG28N65EF-GE3
SIHG28N65EF-GE3
Vishay Siliconix
MOSFET N-CH 650V 28A TO247AC
RV4E031RPHZGTCR1
RV4E031RPHZGTCR1
Rohm Semiconductor
MOSFET P-CH 30V 3.1A DFN1616-6W
ZDS020N60TB
ZDS020N60TB
Rohm Semiconductor
MOSFET N-CH 600V 630MA 8SOP

Related Product By Brand

BBY5603WE6327HTSA1
BBY5603WE6327HTSA1
Infineon Technologies
DIODE TUNING 10V 20MA SOD-323
BC817K-25E6327
BC817K-25E6327
Infineon Technologies
BIPOLAR GEN PURPOSE TRANSISTOR
AUIRF7343Q
AUIRF7343Q
Infineon Technologies
MOSFET N/P-CH 55V 4.7/3.4A 8SOIC
BSC024NE2LSATMA1
BSC024NE2LSATMA1
Infineon Technologies
MOSFET N-CH 25V 25A/110A TDSON
IKP20N65F5
IKP20N65F5
Infineon Technologies
IKP20N65 - DISCRETE IGBT WITH AN
IRU3138CSTR
IRU3138CSTR
Infineon Technologies
IC REG CTRLR BUCK 14SOIC
S6E1C12D0AGN20000
S6E1C12D0AGN20000
Infineon Technologies
IC MCU 32BIT 128KB FLASH 64QFN
CY90F349CASPFR-GSE1
CY90F349CASPFR-GSE1
Infineon Technologies
IC MCU 16BIT 256KB FLASH 100QFP
MB91F525FSCPMC-GS-ERE2
MB91F525FSCPMC-GS-ERE2
Infineon Technologies
IC MCU 32BIT 832KB FLASH 100LQFP
MB96F683ABPMC-GS-114JAE1
MB96F683ABPMC-GS-114JAE1
Infineon Technologies
IC MCU 16BIT 96KB FLASH 80LQFP
CY7C1441AV33-133BZI
CY7C1441AV33-133BZI
Infineon Technologies
IC SRAM 36MBIT PARALLEL 165FBGA
CY9AF005PMC-G-JNE2
CY9AF005PMC-G-JNE2
Infineon Technologies
IC MCU FLASH MICOM 100LQFP