IRF6715MTRPBF
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Infineon Technologies IRF6715MTRPBF

Manufacturer No:
IRF6715MTRPBF
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Datasheet:
IRF6715MTRPBF Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 25V 34A DIRECTFET
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):25 V
Current - Continuous Drain (Id) @ 25°C:34A (Ta), 180A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:1.6mOhm @ 34A, 10V
Vgs(th) (Max) @ Id:2.4V @ 100µA
Gate Charge (Qg) (Max) @ Vgs:59 nC @ 4.5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:5340 pF @ 13 V
FET Feature:- 
Power Dissipation (Max):2.8W (Ta), 78W (Tc)
Operating Temperature:-40°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:DIRECTFET™ MX
Package / Case:DirectFET™ Isometric MX
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Part Number IRF6715MTRPBF IRF6717MTRPBF   IRF6775MTRPBF   IRF6785MTRPBF   IRF6795MTRPBF   IRF6716MTRPBF   IRF6725MTRPBF   IRF6714MTRPBF   IRF6715MTR1PBF  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Active Active Active Active Active Active Obsolete Active Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 25 V 25 V 150 V 200 V 25 V 25 V 30 V 25 V 25 V
Current - Continuous Drain (Id) @ 25°C 34A (Ta), 180A (Tc) 38A (Ta), 200A (Tc) 4.9A (Ta), 28A (Tc) 3.4A (Ta), 19A (Tc) 32A (Ta), 160A (Tc) 39A (Ta), 180A (Tc) 28A (Ta), 170A (Tc) 29A (Ta), 166A (Tc) 34A (Ta), 180A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V 10V 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 1.6mOhm @ 34A, 10V 1.25mOhm @ 38A, 10V 56mOhm @ 5.6A, 10V 100mOhm @ 4.2A, 10V 1.8mOhm @ 32A, 10V 1.6mOhm @ 40A, 10V 2.2mOhm @ 28A, 10V 2.1mOhm @ 29A, 10V 1.6mOhm @ 34A, 10V
Vgs(th) (Max) @ Id 2.4V @ 100µA 2.35V @ 150µA 5V @ 100µA 5V @ 100µA 2.35V @ 100µA 2.4V @ 100µA 2.35V @ 100µA 2.4V @ 100µA 2.4V @ 100µA
Gate Charge (Qg) (Max) @ Vgs 59 nC @ 4.5 V 69 nC @ 4.5 V 36 nC @ 10 V 36 nC @ 10 V 53 nC @ 4.5 V 59 nC @ 4.5 V 54 nC @ 4.5 V 44 nC @ 4.5 V 59 nC @ 4.5 V
Vgs (Max) ±20V ±20V ±20V ±20V ±20V ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 5340 pF @ 13 V 6750 pF @ 13 V 1411 pF @ 25 V 1500 pF @ 25 V 4280 pF @ 13 V 5150 pF @ 13 V 4700 pF @ 15 V 3890 pF @ 13 V 5340 pF @ 13 V
FET Feature - - - - - - - - -
Power Dissipation (Max) 2.8W (Ta), 78W (Tc) 2.8W (Ta), 96W (Tc) 2.8W (Ta), 89W (Tc) 2.8W (Ta), 57W (Tc) 2.8W (Ta), 75W (Tc) 3.6W (Ta), 78W (Tc) 2.8W (Ta), 100W (Tc) 2.8W (Ta), 89W (Tc) 2.8W (Ta), 78W (Tc)
Operating Temperature -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package DIRECTFET™ MX DIRECTFET™ MX DIRECTFET™ MZ DIRECTFET™ MZ DIRECTFET™ MX DIRECTFET™ MX DIRECTFET™ MX DIRECTFET™ MX DIRECTFET™ MX
Package / Case DirectFET™ Isometric MX DirectFET™ Isometric MX DirectFET™ Isometric MZ DirectFET™ Isometric MZ DirectFET™ Isometric MX DirectFET™ Isometric MX DirectFET™ Isometric MX DirectFET™ Isometric MX DirectFET™ Isometric MX

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