IRF6714MTRPBF
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Infineon Technologies IRF6714MTRPBF

Manufacturer No:
IRF6714MTRPBF
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Datasheet:
IRF6714MTRPBF Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 25V 29A DIRECTFET
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):25 V
Current - Continuous Drain (Id) @ 25°C:29A (Ta), 166A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:2.1mOhm @ 29A, 10V
Vgs(th) (Max) @ Id:2.4V @ 100µA
Gate Charge (Qg) (Max) @ Vgs:44 nC @ 4.5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:3890 pF @ 13 V
FET Feature:- 
Power Dissipation (Max):2.8W (Ta), 89W (Tc)
Operating Temperature:-40°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:DIRECTFET™ MX
Package / Case:DirectFET™ Isometric MX
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Similar Products

Part Number IRF6714MTRPBF IRF6717MTRPBF   IRF6716MTRPBF   IRF6715MTRPBF   IRF6724MTRPBF   IRF6794MTRPBF   IRF6714MTR1PBF  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Active Active Active Active Active Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 25 V 25 V 25 V 25 V 30 V 25 V 25 V
Current - Continuous Drain (Id) @ 25°C 29A (Ta), 166A (Tc) 38A (Ta), 200A (Tc) 39A (Ta), 180A (Tc) 34A (Ta), 180A (Tc) 27A (Ta), 150A (Tc) 32A (Ta), 200A (Tc) 29A (Ta), 166A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 2.1mOhm @ 29A, 10V 1.25mOhm @ 38A, 10V 1.6mOhm @ 40A, 10V 1.6mOhm @ 34A, 10V 2.5mOhm @ 27A, 10V 1.7mOhm @ 32A, 10V 2.1mOhm @ 29A, 10V
Vgs(th) (Max) @ Id 2.4V @ 100µA 2.35V @ 150µA 2.4V @ 100µA 2.4V @ 100µA 2.35V @ 100µA 2.35V @ 100µA 2.4V @ 100µA
Gate Charge (Qg) (Max) @ Vgs 44 nC @ 4.5 V 69 nC @ 4.5 V 59 nC @ 4.5 V 59 nC @ 4.5 V 54 nC @ 4.5 V 47 nC @ 4.5 V 44 nC @ 4.5 V
Vgs (Max) ±20V ±20V ±20V ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 3890 pF @ 13 V 6750 pF @ 13 V 5150 pF @ 13 V 5340 pF @ 13 V 4404 pF @ 15 V 4420 pF @ 13 V 3890 pF @ 13 V
FET Feature - - - - - Schottky Diode (Body) -
Power Dissipation (Max) 2.8W (Ta), 89W (Tc) 2.8W (Ta), 96W (Tc) 3.6W (Ta), 78W (Tc) 2.8W (Ta), 78W (Tc) 2.8W (Ta), 89W (Tc) 2.8W (Ta), 100W (Tc) 2.8W (Ta), 89W (Tc)
Operating Temperature -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package DIRECTFET™ MX DIRECTFET™ MX DIRECTFET™ MX DIRECTFET™ MX DIRECTFET™ MX DIRECTFET™ MX DIRECTFET™ MX
Package / Case DirectFET™ Isometric MX DirectFET™ Isometric MX DirectFET™ Isometric MX DirectFET™ Isometric MX DirectFET™ Isometric MX DirectFET™ Isometric MX DirectFET™ Isometric MX

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