IRF6714MTR1PBF
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Infineon Technologies IRF6714MTR1PBF

Manufacturer No:
IRF6714MTR1PBF
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Datasheet:
IRF6714MTR1PBF Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 25V 29A DIRECTFET
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):25 V
Current - Continuous Drain (Id) @ 25°C:29A (Ta), 166A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:2.1mOhm @ 29A, 10V
Vgs(th) (Max) @ Id:2.4V @ 100µA
Gate Charge (Qg) (Max) @ Vgs:44 nC @ 4.5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:3890 pF @ 13 V
FET Feature:- 
Power Dissipation (Max):2.8W (Ta), 89W (Tc)
Operating Temperature:-40°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:DIRECTFET™ MX
Package / Case:DirectFET™ Isometric MX
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Similar Products

Part Number IRF6714MTR1PBF IRF6794MTR1PBF   IRF6714MTRPBF   IRF6715MTR1PBF   IRF6716MTR1PBF   IRF6724MTR1PBF   IRF6717MTR1PBF  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Obsolete Obsolete Active Obsolete Obsolete Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 25 V 25 V 25 V 25 V 25 V 30 V 25 V
Current - Continuous Drain (Id) @ 25°C 29A (Ta), 166A (Tc) 32A (Ta), 200A (Tc) 29A (Ta), 166A (Tc) 34A (Ta), 180A (Tc) 39A (Ta), 180A (Tc) 27A (Ta), 150A (Tc) 38A (Ta), 200A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 2.1mOhm @ 29A, 10V 1.7mOhm @ 32A, 10V 2.1mOhm @ 29A, 10V 1.6mOhm @ 34A, 10V 1.6mOhm @ 40A, 10V 2.5mOhm @ 27A, 10V 1.25mOhm @ 38A, 10V
Vgs(th) (Max) @ Id 2.4V @ 100µA 2.35V @ 100µA 2.4V @ 100µA 2.4V @ 100µA 2.4V @ 100µA 2.35V @ 100µA 2.35V @ 150µA
Gate Charge (Qg) (Max) @ Vgs 44 nC @ 4.5 V 47 nC @ 4.5 V 44 nC @ 4.5 V 59 nC @ 4.5 V 59 nC @ 4.5 V 54 nC @ 4.5 V 69 nC @ 4.5 V
Vgs (Max) ±20V ±20V ±20V ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 3890 pF @ 13 V 4420 pF @ 13 V 3890 pF @ 13 V 5340 pF @ 13 V 5150 pF @ 13 V 4404 pF @ 15 V 6750 pF @ 13 V
FET Feature - Schottky Diode (Body) - - - - -
Power Dissipation (Max) 2.8W (Ta), 89W (Tc) 2.8W (Ta), 100W (Tc) 2.8W (Ta), 89W (Tc) 2.8W (Ta), 78W (Tc) 3.6W (Ta), 78W (Tc) 2.8W (Ta), 89W (Tc) 2.8W (Ta), 96W (Tc)
Operating Temperature -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package DIRECTFET™ MX DIRECTFET™ MX DIRECTFET™ MX DIRECTFET™ MX DIRECTFET™ MX DIRECTFET™ MX DIRECTFET™ MX
Package / Case DirectFET™ Isometric MX DirectFET™ Isometric MX DirectFET™ Isometric MX DirectFET™ Isometric MX DirectFET™ Isometric MX DirectFET™ Isometric MX DirectFET™ Isometric MX

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