IRF6711STRPBF
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Infineon Technologies IRF6711STRPBF

Manufacturer No:
IRF6711STRPBF
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Datasheet:
IRF6711STRPBF Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 25V 19A DIRECTFET
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):25 V
Current - Continuous Drain (Id) @ 25°C:19A (Ta), 84A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:3.8mOhm @ 19A, 10V
Vgs(th) (Max) @ Id:2.35V @ 25µA
Gate Charge (Qg) (Max) @ Vgs:20 nC @ 4.5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1810 pF @ 13 V
FET Feature:- 
Power Dissipation (Max):2.2W (Ta), 42W (Tc)
Operating Temperature:-40°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:DIRECTFET™ SQ
Package / Case:DirectFET™ Isometric SQ
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Similar Products

Part Number IRF6711STRPBF IRF6712STRPBF   IRF6713STRPBF   IRF6811STRPBF   IRF6721STRPBF   IRF6711STR1PBF  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Active Active Obsolete Obsolete Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 25 V 25 V 25 V 25 V 30 V 25 V
Current - Continuous Drain (Id) @ 25°C 19A (Ta), 84A (Tc) 17A (Ta), 68A (Tc) 22A (Ta), 95A (Tc) 19A (Ta), 74A (Tc) 14A (Ta), 60A (Tc) 19A (Ta), 84A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 3.8mOhm @ 19A, 10V 4.9mOhm @ 17A, 10V 3mOhm @ 22A, 10V 3.7mOhm @ 19A, 10V 7.3mOhm @ 14A, 10V 3.8mOhm @ 19A, 10V
Vgs(th) (Max) @ Id 2.35V @ 25µA 2.4V @ 50µA 2.4V @ 50µA 2.1V @ 35µA 2.4V @ 25µA 2.35V @ 25µA
Gate Charge (Qg) (Max) @ Vgs 20 nC @ 4.5 V 18 nC @ 4.5 V 32 nC @ 4.5 V 17 nC @ 4.5 V 17 nC @ 4.5 V 20 nC @ 4.5 V
Vgs (Max) ±20V ±20V ±20V ±16V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 1810 pF @ 13 V 1570 pF @ 13 V 2880 pF @ 13 V 1590 pF @ 13 V 1430 pF @ 15 V 1810 pF @ 13 V
FET Feature - - - - - -
Power Dissipation (Max) 2.2W (Ta), 42W (Tc) 2.2W (Ta), 36W (Tc) 2.2W (Ta), 42W (Tc) 2.1W (Ta), 32W (Tc) 2.2W (Ta), 42W (Tc) 2.2W (Ta), 42W (Tc)
Operating Temperature -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package DIRECTFET™ SQ DIRECTFET™ SQ DIRECTFET™ SQ DIRECTFET™ SQ DIRECTFET™ SQ DIRECTFET™ SQ
Package / Case DirectFET™ Isometric SQ DirectFET™ Isometric SQ DirectFET™ Isometric SQ DirectFET™ Isometric SQ DirectFET™ Isometric SQ DirectFET™ Isometric SQ

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