IRF6678TR1PBF
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Infineon Technologies IRF6678TR1PBF

Manufacturer No:
IRF6678TR1PBF
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Datasheet:
IRF6678TR1PBF Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 30V 30A DIRECTFET
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:30A (Ta), 150A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:2.2mOhm @ 30A, 10V
Vgs(th) (Max) @ Id:2.25V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:65 nC @ 4.5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:5640 pF @ 15 V
FET Feature:- 
Power Dissipation (Max):2.8W (Ta), 89W (Tc)
Operating Temperature:-40°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:DIRECTFET™ MX
Package / Case:DirectFET™ Isometric MX
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Part Number IRF6678TR1PBF IRF6678TRPBF   IRF6618TR1PBF   IRF6628TR1PBF   IRF6638TR1PBF   IRF6648TR1PBF   IRF6668TR1PBF   IRF6674TR1PBF  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V 30 V 25 V 30 V 60 V 80 V 60 V
Current - Continuous Drain (Id) @ 25°C 30A (Ta), 150A (Tc) 30A (Ta), 150A (Tc) 30A (Ta), 170A (Tc) 27A (Ta), 160A (Tc) 25A (Ta), 140A (Tc) 86A (Tc) 55A (Tc) 13.4A (Ta), 67A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 2.2mOhm @ 30A, 10V 2.2mOhm @ 30A, 10V 2.2mOhm @ 30A, 10V 2.5mOhm @ 27A, 10V 2.9mOhm @ 25A, 10V 7mOhm @ 17A, 10V 15mOhm @ 12A, 10V 11mOhm @ 13.4A, 10V
Vgs(th) (Max) @ Id 2.25V @ 250µA 2.25V @ 250µA 2.35V @ 250µA 2.35V @ 100µA 2.35V @ 100µA 4.9V @ 150µA 4.9V @ 100µA 4.9V @ 100µA
Gate Charge (Qg) (Max) @ Vgs 65 nC @ 4.5 V 65 nC @ 4.5 V 65 nC @ 4.5 V 47 nC @ 4.5 V 45 nC @ 4.5 V 50 nC @ 10 V 31 nC @ 10 V 36 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V ±20V ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 5640 pF @ 15 V 5640 pF @ 15 V 5640 pF @ 15 V 3770 pF @ 15 V 3770 pF @ 15 V 2120 pF @ 25 V 1320 pF @ 25 V 1350 pF @ 25 V
FET Feature - - - - - - - -
Power Dissipation (Max) 2.8W (Ta), 89W (Tc) 2.8W (Ta), 89W (Tc) 2.8W (Ta), 89W (Tc) 2.8W (Ta), 96W (Tc) 2.8W (Ta), 89W (Tc) 2.8W (Ta), 89W (Tc) 2.8W (Ta), 89W (Tc) 3.6W (Ta), 89W (Tc)
Operating Temperature -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package DIRECTFET™ MX DIRECTFET™ MX DIRECTFET™ MT DIRECTFET™ MX DIRECTFET™ MX DIRECTFET™ MN DIRECTFET™ MZ DIRECTFET™ MZ
Package / Case DirectFET™ Isometric MX DirectFET™ Isometric MX DirectFET™ Isometric MT DirectFET™ Isometric MX DirectFET™ Isometric MX DirectFET™ Isometric MN DirectFET™ Isometric MZ DirectFET™ Isometric MZ

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