IRF6665TR1PBF
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Infineon Technologies IRF6665TR1PBF

Manufacturer No:
IRF6665TR1PBF
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Datasheet:
IRF6665TR1PBF Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 100V 4.2A DIRECTFET
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:4.2A (Ta), 19A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:62mOhm @ 5A, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:13 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:530 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):2.2W (Ta), 42W (Tc)
Operating Temperature:-40°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:DIRECTFET™ SH
Package / Case:DirectFET™ Isometric SH
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Similar Products

Part Number IRF6665TR1PBF IRF6665TRPBF   IRF6668TR1PBF   IRF6635TR1PBF   IRF6645TR1PBF   IRF6655TR1PBF   IRF6662TR1PBF  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Obsolete Active Obsolete Obsolete Obsolete Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 100 V 80 V 30 V 100 V 100 V 100 V
Current - Continuous Drain (Id) @ 25°C 4.2A (Ta), 19A (Tc) 4.2A (Ta), 19A (Tc) 55A (Tc) 32A (Ta), 180A (Tc) 5.7A (Ta), 25A (Tc) 4.2A (Ta), 19A (Tc) 8.3A (Ta), 47A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 4.5V, 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 62mOhm @ 5A, 10V 62mOhm @ 5A, 10V 15mOhm @ 12A, 10V 1.8mOhm @ 32A, 10V 35mOhm @ 5.7A, 10V 62mOhm @ 5A, 10V 22mOhm @ 8.2A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA 5V @ 250µA 4.9V @ 100µA 2.35V @ 250µA 4.9V @ 50µA 4.8V @ 25µA 4.9V @ 100µA
Gate Charge (Qg) (Max) @ Vgs 13 nC @ 10 V 13 nC @ 10 V 31 nC @ 10 V 71 nC @ 4.5 V 20 nC @ 10 V 11.7 nC @ 10 V 31 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 530 pF @ 25 V 530 pF @ 25 V 1320 pF @ 25 V 5970 pF @ 15 V 890 pF @ 25 V 530 pF @ 25 V 1360 pF @ 25 V
FET Feature - - - - - - -
Power Dissipation (Max) 2.2W (Ta), 42W (Tc) 2.2W (Ta), 42W (Tc) 2.8W (Ta), 89W (Tc) 2.8W (Ta), 89W (Tc) 2.2W (Ta), 42W (Tc) 2.2W (Ta), 42W (Tc) 2.8W (Ta), 89W (Tc)
Operating Temperature -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package DIRECTFET™ SH DIRECTFET™ SH DIRECTFET™ MZ DIRECTFET™ MX DIRECTFET™ SJ DIRECTFET™ SH DIRECTFET™ MZ
Package / Case DirectFET™ Isometric SH DirectFET™ Isometric SH DirectFET™ Isometric MZ DirectFET™ Isometric MX DirectFET™ Isometric SJ DirectFET™ Isometric SH DirectFET™ Isometric MZ

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