IRF6662TR1PBF
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Infineon Technologies IRF6662TR1PBF

Manufacturer No:
IRF6662TR1PBF
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Datasheet:
IRF6662TR1PBF Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 100V 8.3A DIRECTFET
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:8.3A (Ta), 47A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:22mOhm @ 8.2A, 10V
Vgs(th) (Max) @ Id:4.9V @ 100µA
Gate Charge (Qg) (Max) @ Vgs:31 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1360 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):2.8W (Ta), 89W (Tc)
Operating Temperature:-40°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:DIRECTFET™ MZ
Package / Case:DirectFET™ Isometric MZ
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Similar Products

Part Number IRF6662TR1PBF IRF6662TRPBF   IRF6665TR1PBF   IRF6668TR1PBF   IRF6612TR1PBF   IRF6622TR1PBF  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Obsolete Active Obsolete Obsolete Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 100 V 100 V 80 V 30 V 25 V
Current - Continuous Drain (Id) @ 25°C 8.3A (Ta), 47A (Tc) 8.3A (Ta), 47A (Tc) 4.2A (Ta), 19A (Tc) 55A (Tc) 24A (Ta), 136A (Tc) 15A (Ta), 59A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 22mOhm @ 8.2A, 10V 22mOhm @ 8.2A, 10V 62mOhm @ 5A, 10V 15mOhm @ 12A, 10V 3.3mOhm @ 24A, 10V 6.3mOhm @ 15A, 10V
Vgs(th) (Max) @ Id 4.9V @ 100µA 4.9V @ 100µA 5V @ 250µA 4.9V @ 100µA 2.25V @ 250µA 2.35V @ 25µA
Gate Charge (Qg) (Max) @ Vgs 31 nC @ 10 V 31 nC @ 10 V 13 nC @ 10 V 31 nC @ 10 V 45 nC @ 4.5 V 17 nC @ 4.5 V
Vgs (Max) ±20V ±20V ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 1360 pF @ 25 V 1360 pF @ 25 V 530 pF @ 25 V 1320 pF @ 25 V 3970 pF @ 15 V 1450 pF @ 13 V
FET Feature - - - - - -
Power Dissipation (Max) 2.8W (Ta), 89W (Tc) 2.8W (Ta), 89W (Tc) 2.2W (Ta), 42W (Tc) 2.8W (Ta), 89W (Tc) 2.8W (Ta), 89W (Tc) 2.2W (Ta), 34W (Tc)
Operating Temperature -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package DIRECTFET™ MZ DIRECTFET™ MZ DIRECTFET™ SH DIRECTFET™ MZ DIRECTFET™ MX DIRECTFET™ SQ
Package / Case DirectFET™ Isometric MZ DirectFET™ Isometric MZ DirectFET™ Isometric SH DirectFET™ Isometric MZ DirectFET™ Isometric MX DirectFET™ Isometric SQ

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