IRF6646TR1PBF
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Infineon Technologies IRF6646TR1PBF

Manufacturer No:
IRF6646TR1PBF
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Datasheet:
IRF6646TR1PBF Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 80V 12A DIRECTFET
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):80 V
Current - Continuous Drain (Id) @ 25°C:12A (Ta), 68A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:9.5mOhm @ 12A, 10V
Vgs(th) (Max) @ Id:4.9V @ 150µA
Gate Charge (Qg) (Max) @ Vgs:50 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:2060 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):2.8W (Ta), 89W (Tc)
Operating Temperature:-40°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:DIRECTFET™ MN
Package / Case:DirectFET™ Isometric MN
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Part Number IRF6646TR1PBF IRF6646TRPBF   IRF6648TR1PBF   IRF6616TR1PBF   IRF6626TR1PBF   IRF6636TR1PBF   IRF6641TR1PBF   IRF6643TR1PBF   IRF6644TR1PBF   IRF6645TR1PBF  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Obsolete Active Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 80 V 80 V 60 V 40 V 30 V 20 V 200 V 150 V 100 V 100 V
Current - Continuous Drain (Id) @ 25°C 12A (Ta), 68A (Tc) 12A (Ta), 68A (Tc) 86A (Tc) 19A (Ta), 106A (Tc) 16A (Ta), 72A (Tc) 18A (Ta), 81A (Tc) 4.6A (Ta), 26A (Tc) 6.2A (Ta), 35A (Tc) 10.3A (Ta), 60A (Tc) 5.7A (Ta), 25A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 9.5mOhm @ 12A, 10V 9.5mOhm @ 12A, 10V 7mOhm @ 17A, 10V 5mOhm @ 19A, 10V 5.4mOhm @ 16A, 10V 4.5mOhm @ 18A, 10V 59.9mOhm @ 5.5A, 10V 34.5mOhm @ 7.6A, 10V 13mOhm @ 10.3A, 10V 35mOhm @ 5.7A, 10V
Vgs(th) (Max) @ Id 4.9V @ 150µA 4.9V @ 150µA 4.9V @ 150µA 2.25V @ 250µA 2.35V @ 250µA 2.45V @ 250µA 4.9V @ 150µA 4.9V @ 150µA 4.8V @ 150µA 4.9V @ 50µA
Gate Charge (Qg) (Max) @ Vgs 50 nC @ 10 V 50 nC @ 10 V 50 nC @ 10 V 44 nC @ 4.5 V 29 nC @ 4.5 V 27 nC @ 4.5 V 48 nC @ 10 V 55 nC @ 10 V 47 nC @ 10 V 20 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V ±20V ±20V ±20V ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 2060 pF @ 25 V 2060 pF @ 25 V 2120 pF @ 25 V 3765 pF @ 20 V 2380 pF @ 15 V 2420 pF @ 10 V 2290 pF @ 25 V 2340 pF @ 25 V 2210 pF @ 25 V 890 pF @ 25 V
FET Feature - - - - - - - - - -
Power Dissipation (Max) 2.8W (Ta), 89W (Tc) 2.8W (Ta), 89W (Tc) 2.8W (Ta), 89W (Tc) 2.8W (Ta), 89W (Tc) 2.2W (Ta), 42W (Tc) 2.2W (Ta), 42W (Tc) 2.8W (Ta), 89W (Tc) 2.8W (Ta), 89W (Tc) 2.8W (Ta), 89W (Tc) 2.2W (Ta), 42W (Tc)
Operating Temperature -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package DIRECTFET™ MN DIRECTFET™ MN DIRECTFET™ MN DIRECTFET™ MX DIRECTFET™ ST DIRECTFET™ ST DIRECTFET™ MZ DIRECTFET™ MZ DIRECTFET™ MN DIRECTFET™ SJ
Package / Case DirectFET™ Isometric MN DirectFET™ Isometric MN DirectFET™ Isometric MN DirectFET™ Isometric MX DirectFET™ Isometric ST DirectFET™ Isometric ST DirectFET™ Isometric MZ DirectFET™ Isometric MZ DirectFET™ Isometric MN DirectFET™ Isometric SJ

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