IRF6645TR1PBF
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Infineon Technologies IRF6645TR1PBF

Manufacturer No:
IRF6645TR1PBF
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Datasheet:
IRF6645TR1PBF Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 100V 5.7A DIRECTFET
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:5.7A (Ta), 25A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:35mOhm @ 5.7A, 10V
Vgs(th) (Max) @ Id:4.9V @ 50µA
Gate Charge (Qg) (Max) @ Vgs:20 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:890 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):2.2W (Ta), 42W (Tc)
Operating Temperature:-40°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:DIRECTFET™ SJ
Package / Case:DirectFET™ Isometric SJ
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Similar Products

Part Number IRF6645TR1PBF IRF6645TRPBF   IRF6646TR1PBF   IRF6648TR1PBF   IRF6665TR1PBF   IRF6655TR1PBF   IRF6635TR1PBF   IRF6641TR1PBF   IRF6643TR1PBF   IRF6644TR1PBF  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Obsolete Active Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 100 V 80 V 60 V 100 V 100 V 30 V 200 V 150 V 100 V
Current - Continuous Drain (Id) @ 25°C 5.7A (Ta), 25A (Tc) 5.7A (Ta), 25A (Tc) 12A (Ta), 68A (Tc) 86A (Tc) 4.2A (Ta), 19A (Tc) 4.2A (Ta), 19A (Tc) 32A (Ta), 180A (Tc) 4.6A (Ta), 26A (Tc) 6.2A (Ta), 35A (Tc) 10.3A (Ta), 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V 10V 4.5V, 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 35mOhm @ 5.7A, 10V 35mOhm @ 5.7A, 10V 9.5mOhm @ 12A, 10V 7mOhm @ 17A, 10V 62mOhm @ 5A, 10V 62mOhm @ 5A, 10V 1.8mOhm @ 32A, 10V 59.9mOhm @ 5.5A, 10V 34.5mOhm @ 7.6A, 10V 13mOhm @ 10.3A, 10V
Vgs(th) (Max) @ Id 4.9V @ 50µA 4.9V @ 50µA 4.9V @ 150µA 4.9V @ 150µA 5V @ 250µA 4.8V @ 25µA 2.35V @ 250µA 4.9V @ 150µA 4.9V @ 150µA 4.8V @ 150µA
Gate Charge (Qg) (Max) @ Vgs 20 nC @ 10 V 20 nC @ 10 V 50 nC @ 10 V 50 nC @ 10 V 13 nC @ 10 V 11.7 nC @ 10 V 71 nC @ 4.5 V 48 nC @ 10 V 55 nC @ 10 V 47 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V ±20V ±20V ±20V ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 890 pF @ 25 V 890 pF @ 25 V 2060 pF @ 25 V 2120 pF @ 25 V 530 pF @ 25 V 530 pF @ 25 V 5970 pF @ 15 V 2290 pF @ 25 V 2340 pF @ 25 V 2210 pF @ 25 V
FET Feature - - - - - - - - - -
Power Dissipation (Max) 2.2W (Ta), 42W (Tc) 2.2W (Ta), 42W (Tc) 2.8W (Ta), 89W (Tc) 2.8W (Ta), 89W (Tc) 2.2W (Ta), 42W (Tc) 2.2W (Ta), 42W (Tc) 2.8W (Ta), 89W (Tc) 2.8W (Ta), 89W (Tc) 2.8W (Ta), 89W (Tc) 2.8W (Ta), 89W (Tc)
Operating Temperature -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package DIRECTFET™ SJ DIRECTFET™ SJ DIRECTFET™ MN DIRECTFET™ MN DIRECTFET™ SH DIRECTFET™ SH DIRECTFET™ MX DIRECTFET™ MZ DIRECTFET™ MZ DIRECTFET™ MN
Package / Case DirectFET™ Isometric SJ DirectFET™ Isometric SJ DirectFET™ Isometric MN DirectFET™ Isometric MN DirectFET™ Isometric SH DirectFET™ Isometric SH DirectFET™ Isometric MX DirectFET™ Isometric MZ DirectFET™ Isometric MZ DirectFET™ Isometric MN

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