IRF6644TR1PBF
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Infineon Technologies IRF6644TR1PBF

Manufacturer No:
IRF6644TR1PBF
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Datasheet:
IRF6644TR1PBF Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 100V 10.3A DIRECTFET
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:10.3A (Ta), 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:13mOhm @ 10.3A, 10V
Vgs(th) (Max) @ Id:4.8V @ 150µA
Gate Charge (Qg) (Max) @ Vgs:47 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:2210 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):2.8W (Ta), 89W (Tc)
Operating Temperature:-40°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:DIRECTFET™ MN
Package / Case:DirectFET™ Isometric MN
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Part Number IRF6644TR1PBF IRF6644TRPBF   IRF6645TR1PBF   IRF6646TR1PBF   IRF6648TR1PBF   IRF6674TR1PBF   IRF6614TR1PBF   IRF6641TR1PBF   IRF6643TR1PBF  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Obsolete Active Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 100 V 100 V 80 V 60 V 60 V 40 V 200 V 150 V
Current - Continuous Drain (Id) @ 25°C 10.3A (Ta), 60A (Tc) 10.3A (Ta), 60A (Tc) 5.7A (Ta), 25A (Tc) 12A (Ta), 68A (Tc) 86A (Tc) 13.4A (Ta), 67A (Tc) 12.7A (Ta), 55A (Tc) 4.6A (Ta), 26A (Tc) 6.2A (Ta), 35A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V 10V 4.5V, 10V 10V 10V
Rds On (Max) @ Id, Vgs 13mOhm @ 10.3A, 10V 13mOhm @ 10.3A, 10V 35mOhm @ 5.7A, 10V 9.5mOhm @ 12A, 10V 7mOhm @ 17A, 10V 11mOhm @ 13.4A, 10V 8.3mOhm @ 12.7A, 10V 59.9mOhm @ 5.5A, 10V 34.5mOhm @ 7.6A, 10V
Vgs(th) (Max) @ Id 4.8V @ 150µA 4.8V @ 150µA 4.9V @ 50µA 4.9V @ 150µA 4.9V @ 150µA 4.9V @ 100µA 2.25V @ 250µA 4.9V @ 150µA 4.9V @ 150µA
Gate Charge (Qg) (Max) @ Vgs 47 nC @ 10 V 47 nC @ 10 V 20 nC @ 10 V 50 nC @ 10 V 50 nC @ 10 V 36 nC @ 10 V 29 nC @ 4.5 V 48 nC @ 10 V 55 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V ±20V ±20V ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 2210 pF @ 25 V 2210 pF @ 25 V 890 pF @ 25 V 2060 pF @ 25 V 2120 pF @ 25 V 1350 pF @ 25 V 2560 pF @ 20 V 2290 pF @ 25 V 2340 pF @ 25 V
FET Feature - - - - - - - - -
Power Dissipation (Max) 2.8W (Ta), 89W (Tc) 2.8W (Ta), 89W (Tc) 2.2W (Ta), 42W (Tc) 2.8W (Ta), 89W (Tc) 2.8W (Ta), 89W (Tc) 3.6W (Ta), 89W (Tc) 2.1W (Ta), 42W (Tc) 2.8W (Ta), 89W (Tc) 2.8W (Ta), 89W (Tc)
Operating Temperature -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package DIRECTFET™ MN DIRECTFET™ MN DIRECTFET™ SJ DIRECTFET™ MN DIRECTFET™ MN DIRECTFET™ MZ DIRECTFET™ ST DIRECTFET™ MZ DIRECTFET™ MZ
Package / Case DirectFET™ Isometric MN DirectFET™ Isometric MN DirectFET™ Isometric SJ DirectFET™ Isometric MN DirectFET™ Isometric MN DirectFET™ Isometric MZ DirectFET™ Isometric ST DirectFET™ Isometric MZ DirectFET™ Isometric MZ

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