IRF6644TR1
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Infineon Technologies IRF6644TR1

Manufacturer No:
IRF6644TR1
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Datasheet:
IRF6644TR1 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 100V 10.3A DIRECTFET
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:10.3A (Ta), 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:13mOhm @ 10.3A, 10V
Vgs(th) (Max) @ Id:4.8V @ 150µA
Gate Charge (Qg) (Max) @ Vgs:47 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:2210 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):2.8W (Ta), 89W (Tc)
Operating Temperature:-40°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:DIRECTFET™ MN
Package / Case:DirectFET™ Isometric MN
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Similar Products

Part Number IRF6644TR1 IRF6646TR1   IRF6648TR1   IRF6604TR1   IRF6614TR1  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Obsolete Obsolete Obsolete Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 80 V 60 V 30 V 40 V
Current - Continuous Drain (Id) @ 25°C 10.3A (Ta), 60A (Tc) 12A (Ta), 68A (Tc) 86A (Tc) 12A (Ta), 49A (Tc) 12.7A (Ta), 55A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 4.5V, 7V 4.5V, 10V
Rds On (Max) @ Id, Vgs 13mOhm @ 10.3A, 10V 9.5mOhm @ 12A, 10V 7mOhm @ 17A, 10V 11.5mOhm @ 12A, 7V 8.3mOhm @ 12.7A, 10V
Vgs(th) (Max) @ Id 4.8V @ 150µA 4.9V @ 150µA 4.9V @ 150µA 2.1V @ 250µA 2.25V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 47 nC @ 10 V 50 nC @ 10 V 50 nC @ 10 V 26 nC @ 4.5 V 29 nC @ 4.5 V
Vgs (Max) ±20V ±20V ±20V ±12V ±20V
Input Capacitance (Ciss) (Max) @ Vds 2210 pF @ 25 V 2060 pF @ 25 V 2120 pF @ 25 V 2270 pF @ 15 V 2560 pF @ 20 V
FET Feature - - - - -
Power Dissipation (Max) 2.8W (Ta), 89W (Tc) 2.8W (Ta), 89W (Tc) 2.8W (Ta), 89W (Tc) 2.3W (Ta), 42W (Tc) 2.1W (Ta), 42W (Tc)
Operating Temperature -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package DIRECTFET™ MN DIRECTFET™ MN DIRECTFET™ MN DIRECTFET™ MQ DIRECTFET™ ST
Package / Case DirectFET™ Isometric MN DirectFET™ Isometric MN DirectFET™ Isometric MN DirectFET™ Isometric MQ DirectFET™ Isometric ST

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