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| Part Number | IRF6644 | IRF6645 | IRF6614 |
|---|---|---|---|
| Manufacturer | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Product Status | Obsolete | Obsolete | Obsolete |
| FET Type | N-Channel | N-Channel | N-Channel |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 100 V | 100 V | 40 V |
| Current - Continuous Drain (Id) @ 25°C | 10.3A (Ta), 60A (Tc) | 5.7A (Ta), 25A (Tc) | 12.7A (Ta), 55A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | 10V | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 13mOhm @ 10.3A, 10V | 35mOhm @ 5.7A, 10V | 8.3mOhm @ 12.7A, 10V |
| Vgs(th) (Max) @ Id | 4.8V @ 150µA | 4.9V @ 50µA | 2.25V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 47 nC @ 10 V | 20 nC @ 10 V | 29 nC @ 4.5 V |
| Vgs (Max) | ±20V | ±20V | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 2210 pF @ 25 V | 890 pF @ 25 V | 2560 pF @ 20 V |
| FET Feature | - | - | - |
| Power Dissipation (Max) | 2.8W (Ta), 89W (Tc) | 3W (Ta), 42W (Tc) | 2.1W (Ta), 42W (Tc) |
| Operating Temperature | -40°C ~ 150°C (TJ) | -40°C ~ 150°C (TJ) | -40°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount |
| Supplier Device Package | DIRECTFET™ MN | DIRECTFET™ SJ | DIRECTFET™ ST |
| Package / Case | DirectFET™ Isometric MN | DirectFET™ Isometric SJ | DirectFET™ Isometric ST |
