IRF6636TR1
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Infineon Technologies IRF6636TR1

Manufacturer No:
IRF6636TR1
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Datasheet:
IRF6636TR1 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 20V 18A DIRECTFET
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:18A (Ta), 81A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:4.5mOhm @ 18A, 10V
Vgs(th) (Max) @ Id:2.45V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:27 nC @ 4.5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:2420 pF @ 10 V
FET Feature:- 
Power Dissipation (Max):2.2W (Ta), 42W (Tc)
Operating Temperature:-40°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:DIRECTFET™ ST
Package / Case:DirectFET™ Isometric ST
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Similar Products

Part Number IRF6636TR1 IRF6637TR1   IRF6646TR1   IRF6616TR1   IRF6626TR1   IRF6633TR1   IRF6635TR1  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V 30 V 80 V 30 V 30 V 20 V 30 V
Current - Continuous Drain (Id) @ 25°C 18A (Ta), 81A (Tc) 14A (Ta), 59A (Tc) 12A (Ta), 68A (Tc) 19A (Ta), 106A (Tc) 16A (Ta), 72A (Tc) 16A (Ta), 59A (Tc) 32A (Ta), 180A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 4.5mOhm @ 18A, 10V 7.7mOhm @ 14A, 10V 9.5mOhm @ 12A, 10V 5mOhm @ 19A, 10V 5.4mOhm @ 16A, 10V 5.6mOhm @ 16A, 10V 1.8mOhm @ 32A, 10V
Vgs(th) (Max) @ Id 2.45V @ 250µA 2.35V @ 250µA 4.9V @ 150µA 2.25V @ 250µA 2.35V @ 250µA 2.2V @ 250µA 2.35V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 27 nC @ 4.5 V 17 nC @ 4.5 V 50 nC @ 10 V 44 nC @ 4.5 V 29 nC @ 4.5 V 17 nC @ 4.5 V 71 nC @ 4.5 V
Vgs (Max) ±20V ±20V ±20V ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 2420 pF @ 10 V 1330 pF @ 15 V 2060 pF @ 25 V 3765 pF @ 20 V 2380 pF @ 15 V 1250 pF @ 10 V 5970 pF @ 15 V
FET Feature - - - - - - -
Power Dissipation (Max) 2.2W (Ta), 42W (Tc) 2.3W (Ta), 42W (Tc) 2.8W (Ta), 89W (Tc) 2.8W (Ta), 89W (Tc) 2.2W (Ta), 42W (Tc) 2.3W (Ta), 42W (Tc) 2.8W (Ta), 89W (Tc)
Operating Temperature -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package DIRECTFET™ ST DIRECTFET™ MP DIRECTFET™ MN DIRECTFET™ MX DIRECTFET™ ST DIRECTFET™ MP DIRECTFET™ MX
Package / Case DirectFET™ Isometric ST DirectFET™ Isometric MP DirectFET™ Isometric MN DirectFET™ Isometric MX DirectFET™ Isometric ST DirectFET™ Isometric MP DirectFET™ Isometric MX

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