IRF6635TRPBF
  • Share:

Infineon Technologies IRF6635TRPBF

Manufacturer No:
IRF6635TRPBF
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Datasheet:
IRF6635TRPBF Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 30V 32A DIRECTFET
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:32A (Ta), 180A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:1.8mOhm @ 32A, 10V
Vgs(th) (Max) @ Id:2.35V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:71 nC @ 4.5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:5970 pF @ 15 V
FET Feature:- 
Power Dissipation (Max):2.8W (Ta), 89W (Tc)
Operating Temperature:-40°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:DIRECTFET™ MX
Package / Case:DirectFET™ Isometric MX
0 Remaining View Similar

In Stock

-
438

Please send RFQ , we will respond immediately.

Similar Products

Part Number IRF6635TRPBF IRF6665TRPBF   IRF6645TRPBF   IRF6637TRPBF   IRF6636TRPBF   IRF6638TRPBF   IRF6655TRPBF   IRF6631TRPBF   IRF6633TRPBF   IRF6635TR1PBF  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Obsolete Active Active Active Active Obsolete Obsolete Obsolete Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 100 V 100 V 30 V 20 V 30 V 100 V 30 V 20 V 30 V
Current - Continuous Drain (Id) @ 25°C 32A (Ta), 180A (Tc) 4.2A (Ta), 19A (Tc) 5.7A (Ta), 25A (Tc) 14A (Ta), 59A (Tc) 18A (Ta), 81A (Tc) 25A (Ta), 140A (Tc) 4.2A (Ta), 19A (Tc) 13A (Ta), 57A (Tc) 16A (Ta), 59A (Tc) 32A (Ta), 180A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 10V 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 1.8mOhm @ 32A, 10V 62mOhm @ 5A, 10V 35mOhm @ 5.7A, 10V 7.7mOhm @ 14A, 10V 4.5mOhm @ 18A, 10V 2.9mOhm @ 25A, 10V 62mOhm @ 5A, 10V 7.8mOhm @ 13A, 10V 5.6mOhm @ 16A, 10V 1.8mOhm @ 32A, 10V
Vgs(th) (Max) @ Id 2.35V @ 250µA 5V @ 250µA 4.9V @ 50µA 2.35V @ 250µA 2.45V @ 250µA 2.35V @ 100µA 4.8V @ 25µA 2.35V @ 25µA 2.2V @ 250µA 2.35V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 71 nC @ 4.5 V 13 nC @ 10 V 20 nC @ 10 V 17 nC @ 4.5 V 27 nC @ 4.5 V 45 nC @ 4.5 V 11.7 nC @ 10 V 18 nC @ 4.5 V 17 nC @ 4.5 V 71 nC @ 4.5 V
Vgs (Max) ±20V ±20V ±20V ±20V ±20V ±20V ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 5970 pF @ 15 V 530 pF @ 25 V 890 pF @ 25 V 1330 pF @ 15 V 2420 pF @ 10 V 3770 pF @ 15 V 530 pF @ 25 V 1450 pF @ 15 V 1250 pF @ 10 V 5970 pF @ 15 V
FET Feature - - - - - - - - - -
Power Dissipation (Max) 2.8W (Ta), 89W (Tc) 2.2W (Ta), 42W (Tc) 2.2W (Ta), 42W (Tc) 2.3W (Ta), 42W (Tc) 2.2W (Ta), 42W (Tc) 2.8W (Ta), 89W (Tc) 2.2W (Ta), 42W (Tc) 2.2W (Ta), 42W (Tc) 2.3W (Ta), 89W (Tc) 2.8W (Ta), 89W (Tc)
Operating Temperature -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package DIRECTFET™ MX DIRECTFET™ SH DIRECTFET™ SJ DIRECTFET™ MP DIRECTFET™ ST DIRECTFET™ MX DIRECTFET™ SH DIRECTFET™ SQ DIRECTFET™ MP DIRECTFET™ MX
Package / Case DirectFET™ Isometric MX DirectFET™ Isometric SH DirectFET™ Isometric SJ DirectFET™ Isometric MP DirectFET™ Isometric ST DirectFET™ Isometric MX DirectFET™ Isometric SH DirectFET™ Isometric SQ DirectFET™ Isometric MP DirectFET™ Isometric MX

Related Product By Categories

VP2106N3-G
VP2106N3-G
Microchip Technology
MOSFET P-CH 60V 250MA TO92-3
FDD2570
FDD2570
Fairchild Semiconductor
MOSFET N-CH 150V 4.7A TO252
STI26NM60N
STI26NM60N
STMicroelectronics
MOSFET N-CH 600V 20A I2PAK
IRF7456TRPBF
IRF7456TRPBF
Infineon Technologies
MOSFET N-CH 20V 16A 8SO
BUK7M6R0-40HX
BUK7M6R0-40HX
Nexperia USA Inc.
MOSFET N-CH 40V 50A LFPAK33
AOB600A60L
AOB600A60L
Alpha & Omega Semiconductor Inc.
MOSFET N-CH 600V 8A TO263
TP2640LG-G
TP2640LG-G
Microchip Technology
MOSFET P-CH 400V 86MA 8SOIC
STE40NK90ZD
STE40NK90ZD
STMicroelectronics
MOSFET N-CH 900V 40A ISOTOP
BSP315PE6327T
BSP315PE6327T
Infineon Technologies
MOSFET P-CH 60V 1.17A SOT223-4
IRF6638TR1PBF
IRF6638TR1PBF
Infineon Technologies
MOSFET N-CH 30V 25A DIRECTFET
IRF1404ZSTRRPBF
IRF1404ZSTRRPBF
Infineon Technologies
MOSFET N-CH 40V 180A D2PAK
BUK626R2-40C,118
BUK626R2-40C,118
Nexperia USA Inc.
MOSFET N-CH 40V 90A DPAK

Related Product By Brand

IRAMS06UP60B
IRAMS06UP60B
Infineon Technologies
PWR MOD 600V 6A 23PWRSIP
BSC200P03LSG
BSC200P03LSG
Infineon Technologies
P-CHANNEL POWER MOSFET
BSP135H6433XTMA1
BSP135H6433XTMA1
Infineon Technologies
MOSFET N-CH 600V 120MA SOT223
IRL40B212
IRL40B212
Infineon Technologies
MOSFET N-CH 40V 195A TO220AB
IPB120N08S403ATMA1
IPB120N08S403ATMA1
Infineon Technologies
MOSFET N-CH 80V 120A TO263-3
IRG4BC10S
IRG4BC10S
Infineon Technologies
IGBT 600V 14A 38W TO220AB
IR2136PBF
IR2136PBF
Infineon Technologies
IC GATE DRVR HALF-BRIDGE 28DIP
CY23FS08OXI
CY23FS08OXI
Infineon Technologies
IC CLK ZDB 8OUT 200MHZ 28SSOP
CY22801KSXC-016
CY22801KSXC-016
Infineon Technologies
IC CLOCK GENERATOR
CY8C28243-24PVXI
CY8C28243-24PVXI
Infineon Technologies
IC MCU 8BIT 16KB FLASH 20SSOP
CY7C1470BV33-250BZXC
CY7C1470BV33-250BZXC
Infineon Technologies
IC SRAM 72MBIT PARALLEL 165FBGA
CY7C1460AV33-250BZC
CY7C1460AV33-250BZC
Infineon Technologies
IC SRAM 36MBIT PARALLEL 165FBGA